Datasheet > DMB53D0UDW-7

DMB53D0UDW-7

更新时间： 2024-11-24 09:54:03

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
7页	130K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR

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中文翻译

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数据手册

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DMB53D0UDW-7 数据手册

DMB53D0UDW

N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR

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Features

Mechanical Data

•

N-Channel MOSFET and NPN Transistor in One Package

Low On-Resistance

Very Low Gate Threshold Voltage, 1.0V max

Low Input Capacitance

Fast Switching Speed

•

Case: SOT-363

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram

Terminals: Finish - Matte Tin annealed over Alloy 42 Lead frame.

Solderable per MIL-STD-202, Method 208

Marking Information: See Page 5

Ordering Information: See Page 5

Weight: 0.006 grams (approximate)

•

Low Input/Output Leakage

Ultra-Small Surface Mount Package

Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)

ESD Protected MOSFET Gate up to 2kV

"Green" Device (Note 3)

•

Qualified to AEC-Q101 Standards for High Reliability

SOT-363

D₂

Q₁

Q₂

G₂

S₂

TOP VIEW

ESD protected gate up to 2kV

TOP VIEW

Internal Schematic

Maximum Ratings – MOSFET, Q1 @T_A= 25°C unless otherwise specified

Characteristic

Symbol

V_DSS

V_GSS

I_D

Value

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Note 1)

±12

160

560

Continuous

Pulsed Drain Current (Note 1)

I_DM

Maximum Ratings - NPN Transistor, Q2 @T_A= 25°C unless otherwise specified

Characteristic

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

6.0

100

Thermal Characteristics, Total Device @T_A= 25°C unless otherwise specified

Characteristic

Total Power Dissipation (Note 1)

Symbol

P_D

Value

250

Unit

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

500

°C/W

°C

R_θ

T_J, T_STG

-55 to +150

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead. Halogen and Antimony Free.

3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

1 of 7

www.diodes.com

December 2009

DMB53D0UDW

Document number: DS31675 Rev. 5 - 2

12 3 4 5 6 7

中文翻译

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与DMB53D0UDW-7相关器件

型号	品牌	获取价格	描述	数据表
DMB53D0UV	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR
DMB53D0UV-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR
DMB54D0UDW	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR
DMB54D0UDW-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR
DMB54D0UV	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR
DMB54D0UV-13	DIODES	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 2-Element
DMB54D0UV-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR
DMB5880-000	SKYWORKS	获取价格	Mixer Diode, 465ohm Z(V) Max, 7.5dB Noise Figure, Silicon
DMB5880-002	SKYWORKS	获取价格	Mixer Diode, 465ohm Z(V) Max, 7.5dB Noise Figure, Silicon
DMB5880AMR	SKYWORKS	获取价格	Mixer Diode, 465ohm Z(V) Max, 7dB Noise Figure, Silicon

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