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DMB54D0UV-7 PDF预览

DMB54D0UV-7

更新时间: 2024-11-06 09:54:03
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
7页 137K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR

DMB54D0UV-7 数据手册

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DMB54D0UV  
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR  
Please click here to visit our online spice models database.  
Mechanical Data  
Features  
N-Channel MOSFET and PNP Transistor in One Package  
Low On-Resistance  
Very Low Gate Threshold Voltage, 1.0V max  
Low Input Capacitance  
Fast Switching Speed  
Case: SOT-563  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminal Connections: See Diagram  
Terminals: Finish - Matte Tin annealed over Copper lead frame.  
Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 5  
Ordering Information: See Page 5  
Weight: 0.006 grams (approximate)  
Low Input/Output Leakage  
Ultra-Small Surface Mount Package  
Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)  
ESD Protected MOSFET Gate up to 2kV  
"Green" Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
SOT-563  
D2  
B
E
Q1  
Q2  
G2  
S2  
C
TOP VIEW  
TOP VIEW  
BOTTOM VIEW  
ESD protected gate up to 2kV  
Internal Schematic  
Maximum Ratings – MOSFET, Q1 @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
VDSS  
VGSS  
ID  
Value  
50  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current (Note 1)  
V
±12  
160  
560  
Continuous  
mA  
mA  
Pulsed Drain Current (Note 1)  
IDM  
Maximum Ratings - PNP Transistor, Q2 @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-50  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
-45  
V
-5.0  
-100  
V
mA  
Thermal Characteristics, Total Device @TA = 25°C unless otherwise specified  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
PD  
Value  
250  
Unit  
mW  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
500  
°C/W  
°C  
Rθ  
TJ, TSTG  
JA  
-55 to +150  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead. Halogen and Antimony Free.  
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
1 of 7  
www.diodes.com  
December 2009  
© Diodes Incorporated  
DMB54D0UV  
Document number: DS31676 Rev. 4 - 2  

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