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DMA50401

更新时间： 2024-11-09 21:10:55
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管
页数 文件大小 规格书
3页 468K
描述
Small Signal Bipolar Transistor, 0.1A I(C), PNP, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, 6 PIN

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中文翻译

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DMA50401 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：unknown
风险等级：5.78最大集电极电流 (IC)：0.1 A
最小直流电流增益 (hFE)：210JESD-30 代码：R-PDSO-F6
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP最大功率耗散 (Abs)：0.15 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

DMA50401 数据手册

 浏览型号DMA50401的Datasheet PDF文件第2页浏览型号DMA50401的Datasheet PDF文件第3页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DMA50401  
Silicon PNP epitaxial planar type  
For general amplification  
DMA20401 in SMini6 type package  
Features  
ꢀPackage  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
ꢀCode  
SMini6-F3-B  
Package dimension clicks here.→  
Click!  
ꢀPin Name  
ꢀBasic Part Number  
1: Emitter (Tr1)  
2: Base (Tr1)  
4: Emitter (Tr2)  
5: Base (Tr2)  
6: Collector (Tr1)  
Dual DSA2001 (Individual)  
3: Collector (Tr2)  
Packaging  
ꢀMarking Symbol: A7  
ꢀInternal Connection  
DMA504010R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
ꢀAbsolute Maximum Ratings T = 25°C  
a
(C1) (B2) (E2)  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
–60  
Unit  
V
6
5
4
–50  
V
Tr1  
Tr2  
–7  
V
–100  
–200  
150  
mA  
mA  
mW  
°C  
1
2
3
(E1) (B1) (C2)  
Peak collector current  
ICP  
Total power dissipation  
PT  
Junction temperature  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
°C  
ꢀElectrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
–60  
–50  
–7  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Forward current transfer ratio  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
VEBO IE = –10 µA, IC = 0  
V
V
ICBO  
ICEO  
hFE  
VCB = –20 V, IE = 0  
VCE = –10 V, IB = 0  
VCE = –10 V, IC = –2 mA  
– 0.1  
–100  
460  
µA  
µA  
210  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = –100 mA, IB = –10 mA  
– 0.2  
150  
– 0.5  
V
fT  
VCE = –10 V, IC = –2 mA  
MHz  
Collector output capacitance  
Cob  
VCB = –10 V, IE = 0, f = 1 MHz  
2
pF  
(Common base, input open circuited)  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: February 2012  
Ver. CED  
1
123

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