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DMA506E10R PDF预览

DMA506E10R

更新时间: 2024-11-09 20:07:39
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
3页 491K
描述
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, 6 PIN

DMA506E10R 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.8最大集电极电流 (IC):0.03 A
集电极-发射极最大电压:20 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):70JESD-30 代码:R-PDSO-F6
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.15 W子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

DMA506E10R 数据手册

 浏览型号DMA506E10R的Datasheet PDF文件第2页浏览型号DMA506E10R的Datasheet PDF文件第3页 
DMA506E1  
Silicon PNP epitaxial planar type  
For general amplication  
DMA206E1 in SMini6 type package  
Package  
Features  
High transition frequency fT  
Code  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
SMini6-F3-B  
Package dimension clicks here.  
Click!  
Basic Part Number  
Pin Name  
Dual DSA2G01 (Individual)  
1: Emitter (Tr1)  
2: Emitter (Tr2)  
3: Base (Tr2)  
4: Collector (Tr2)  
5: Base (Tr1)  
Packaging  
6: Collector (Tr1)  
DMA506E10R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Marking Symbol: C9  
Internal Connection  
Absolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
–30  
Unit  
V
(C1) (B1) (C2)  
6
5
4
–20  
V
Tr2  
–5  
V
Tr1  
–30  
mA  
mW  
°C  
°C  
Total power dissipation  
PT  
150  
1
2
3
(E1) (E2) (B2)  
Junction temperature  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
Electrical Characteristics T = 25°C±3°C  
a
Parameter  
Base-emitter voltage  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
VBE  
ICBO  
ICEO  
IEBO  
hFE  
VCE = –10 V, IC = –1 mA  
VCB = –10 V, IE = 0  
– 0.7  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
– 0.1  
–100  
–10  
µA  
µA  
µA  
VCE = –20 V, IB = 0  
VEB = –5 V, IC = 0  
VCE = –10 V, IC = –1 mA  
70  
220  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = –10 mA, IB = –1 mA  
– 0.1  
300  
V
fT  
VCE = –10 V, IC = –1 mA  
150  
MHz  
Reverse transfer capacitance  
(Common emitter)  
Cre  
VCE = –10 V, IC = –1 mA, f = 10.7 MHz  
1.0  
pF  
Noise gure  
NF  
Zrb  
VCE = –10 V, IC = –1 mA, f = 5 MHz  
VCE = –10 V, IC = –1 mA, f = 2 MHz  
2.8  
22  
dB  
Reverse transfer impedance  
W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Ratio between 2 elements  
*
Publication date: February 2012  
Ver. BED  
1

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