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DG212BDJ-E3 PDF预览

DG212BDJ-E3

更新时间: 2024-01-14 05:05:26
品牌 Logo 应用领域
威世 - VISHAY 复用器开关复用器或开关信号电路光电二极管输出元件
页数 文件大小 规格书
13页 177K
描述
Improved Quad CMOS Analog Switches

DG212BDJ-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DIP
包装说明:DIP, DIP16,.3针数:16
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:1.9Is Samacsys:N
模拟集成电路 - 其他类型:SPSTJESD-30 代码:R-PDIP-T16
JESD-609代码:e3长度:20.13 mm
湿度敏感等级:1负电源电压最大值(Vsup):-22 V
负电源电压最小值(Vsup):-4.5 V标称负供电电压 (Vsup):-15 V
正常位置:NO信道数量:1
功能数量:4端子数量:16
标称断态隔离度:90 dB通态电阻匹配规范:2 Ω
最大通态电阻 (Ron):85 Ω最高工作温度:85 °C
最低工作温度:-40 °C输出:SEPARATE OUTPUT
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP16,.3封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:5,12/+-15 V认证状态:Not Qualified
座面最大高度:5.08 mm子类别:Multiplexer or Switches
最大供电电压 (Vsup):22 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):15 V表面贴装:NO
最长断开时间:200 ns最长接通时间:300 ns
切换:BREAK-BEFORE-MAKE技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mmBase Number Matches:1

DG212BDJ-E3 数据手册

 浏览型号DG212BDJ-E3的Datasheet PDF文件第7页浏览型号DG212BDJ-E3的Datasheet PDF文件第8页浏览型号DG212BDJ-E3的Datasheet PDF文件第9页浏览型号DG212BDJ-E3的Datasheet PDF文件第10页浏览型号DG212BDJ-E3的Datasheet PDF文件第11页浏览型号DG212BDJ-E3的Datasheet PDF文件第12页 
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Document Number: 91000  
Revision: 11-Mar-11  
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