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DG212BDQ PDF预览

DG212BDQ

更新时间: 2024-11-30 10:03:27
品牌 Logo 应用领域
威世 - VISHAY 复用器开关复用器或开关信号电路光电二极管输出元件
页数 文件大小 规格书
8页 88K
描述
Improved Quad CMOS Analog Switches

DG212BDQ 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Transferred零件包装代码:TSSOP
包装说明:TSSOP, TSSOP16,.25针数:16
Reach Compliance Code:unknown风险等级:5.02
Is Samacsys:N模拟集成电路 - 其他类型:SPST
JESD-30 代码:R-PDSO-G16JESD-609代码:e0
正常位置:NO功能数量:4
端子数量:16最大通态电阻 (Ron):200 Ω
最高工作温度:85 °C最低工作温度:-40 °C
输出:SEPARATE OUTPUT封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP16,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
电源:5,12/+-15 V认证状态:Not Qualified
子类别:Multiplexer or Switches表面贴装:YES
最长接通时间:300 ns切换:BREAK-BEFORE-MAKE
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.635 mm端子位置:DUAL
Base Number Matches:1

DG212BDQ 数据手册

 浏览型号DG212BDQ的Datasheet PDF文件第2页浏览型号DG212BDQ的Datasheet PDF文件第3页浏览型号DG212BDQ的Datasheet PDF文件第4页浏览型号DG212BDQ的Datasheet PDF文件第5页浏览型号DG212BDQ的Datasheet PDF文件第6页浏览型号DG212BDQ的Datasheet PDF文件第7页 
DG211B/212B  
Vishay Siliconix  
Improved Quad CMOS Analog Switches  
FEATURES  
BENEFITS  
APPLICATIONS  
D "22-V Supply Voltage Rating  
D TTL and CMOS Compatible Logic  
D Low On-Resistance—rDS(on): 50 W  
D Low Leakage—ID(on): 20 pA  
D Single Supply Operation Possible  
D Extended Temperature Range  
D Fast Switching—tON: 120 ns  
D Low Charge Injection—Q: 1 pC  
D Wide Analog Signal Range  
D Simple Logic Interface  
D Higher Accuracy  
D Industrial Instrumentation  
D Test Equipment  
D Communications Systems  
D Disk Drives  
D Minimum Transients  
D Reduced Power Consumption  
D Superior to DG211/212  
D Space Savings (TSSOP)  
D Computer Peripherals  
D Portable Instruments  
D Sample-and-Hold Circuits  
DESCRIPTION  
The DG211B/212B analog switches are highly improved  
versions of the industry-standard DG211/212. These devices  
are fabricated in Vishay Siliconix’ proprietary silicon gate  
CMOS process, resulting in lower on-resistance, lower  
leakage, higher speed, and lower power consumption.  
up to "22 V, and have an improved continuous current rating  
of 30 mA. An epitaxial layer prevents latchup.  
All devices feature true bi-directional performance in the on  
condition, and will block signals to the supply levels in the off  
condition.  
These quad single-pole single-throw switches are designed  
for a wide variety of applications in telecommunications,  
instrumentation, process control, computer peripherals, etc. An  
improved charge injection compensation design minimizes  
switching transients. The DG211B and DG212B can handle  
The DG211B is a normally closed switch and the DG212B is  
a normally open switch. (See Truth Table.)  
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION  
DG211B  
Dual-In-Line, SOIC and TSSOP  
IN  
D
IN  
2
1
1
1
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
TRUTH TABLE  
D
2
Logic  
DG211B  
DG212B  
S
S
2
0
1
ON  
OFF  
ON  
V–  
V+  
OFF  
GND  
V
L
S
3
Logic “0” v 0.8 V  
Logic “1” w 2.4 V  
S
D
4
4
4
D
3
IN  
IN  
3
Top View  
Document Number: 70040  
S-00788—Rev. H, 24-Apr-00  
www.vishay.com S FaxBack 408-970-5600  
4-1  

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