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DFM1MF PDF预览

DFM1MF

更新时间: 2024-01-19 00:11:13
品牌 Logo 应用领域
瑞萨 - RENESAS 功效光电二极管
页数 文件大小 规格书
3页 40K
描述
1A, 200V, SILICON, SIGNAL DIODE

DFM1MF 技术参数

生命周期:Transferred包装说明:R-PDSO-C2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.28
其他特性:HIGH SPEED SWITCH, LOW NOISE, HIGH EFFICIENCY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-C2元件数量:1
端子数量:2最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.035 µs
表面贴装:YES端子形式:C BEND
端子位置:DUALBase Number Matches:1

DFM1MF 数据手册

 浏览型号DFM1MF的Datasheet PDF文件第2页浏览型号DFM1MF的Datasheet PDF文件第3页 
FAST RECOVERY DIODE  
DFM1MF  
TENTATIVE SPECIFICATION  
FEATURES  
OUTLINE DRAWING  
For high speed switching  
Soft recovery, low noise.  
Low loss, high efficiency.  
Unit in mm(inch)  
Direction of polarity  
Type mark  
Cathode band  
Lot mark  
0.1MAX  
(0.004)  
2.0  
4.3  
(0.08)  
(0.17)  
4.7  
(0.19)  
1.2  
1.2  
(0.05)  
(0.05)  
Weight: 0.05 (g)  
ABSOLUTE MAXIMUM RATINGS  
Item  
Type  
DFM1MF2  
200  
Repetitive Peak Reverse Voltage  
Average Forward Current  
VRRM  
V
A
Single-phase half sine wave 180° conduction  
TL = 130°C  
IF(AV)  
IFSM  
Tj  
1.0  
(
)
25 ( Without PIV, 10ms, conduction Tj = 40°C start )  
Surge(Non-Repetitive) Forward Current  
Operating Junction Temperature  
Storage Temperature  
A
°C  
°C  
-40 ~ +150  
-40 ~ +150  
Tstg  
CHARACTERISTICS(TL=25°C)  
Item  
Symbols Units  
Min. Typ. Max.  
Test Conditions  
Peak Reverse Current  
IRRM  
VFM  
Trr  
µA  
10  
VR = VRRM  
IFM=1.0Ap, Single-phase half  
sine wave 1 cycle  
Peak Forward Voltage  
V
0.95  
35  
Reverse Recovery Time  
Steady State Thermal Impedance  
ns  
IF=0.5A, Irp=1.0A, 25%recovery  
Rth(j-a)  
Rth(j-l)  
120  
20  
On glass-epoxi substrate (  
Soldering land(  
50mm)  
°C/W  
6mm)  
PDE-DFM1MF-0  

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