Datasheet > DFM1SD2

DFM1SD2

更新时间： 2023-01-03 08:41:23

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
4页	53K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon

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中文翻译

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数据手册

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DFM1SD2 数据手册

FAST RECOVERY DIODE

DFM1SD

FEATURES

OUTLINE DRAWING

• For high speed switching.

Unit in mm(inch)

• Diffused-junction. Resin encapsulated.

Direction of polarity

0.6

(0.024)

Color of symbol

& cathode band

Type

DFM1SD1 (100V)

DFM1SD2 (200V)

DFM1SD4 (400V)

DFM1SD6 (600V)

Yellow

White

Blue

Red

Weight: 0.20 (g)

ABSOLUTE MAXIMUM RATINGS

DFM1SD1 DFM1SD2 DFM1SD4 DFM1SD6

Items

Type

100

200

400

600

Repetitive Peak Reverse Voltage

V_RRM

Single-phase half sine wave 180° conduction

TL = 57°C, Lead length = 3mm

Average Forward Current

I_F(AV)

1.0

(

)

40( Without PIV, 10ms conduction, Tj = 40°C start )

6.4( Time = 2 ~ 10ms, I = RMS value )

-40 ~ +150

Surge(Non-Repetitive) Forward Current

I²t Limit Value

I_FSM

I²t

A²s

°C

Operating Junction Temperature

Storage Temperature

T_j

T_stg

-40 ~ +150

Notes (1) Lead mounting : Lead temperature 280°C max. to 3.2mm from body for 5sec. max..

(2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 2kg, Twist 90°×1 cycle.

CHARACTERISTICS(T_L=25°C)

Symbols

I_RRM

Items

Units

Min. Typ. Max.

Test Conditions

DFM1SD1,2

DFM1SD4,6

Peak Reverse Current

µA

Rated V_RRM

I_FM=1.0Ap, Single-phase half sine

wave 1 cycle

Peak Forward Voltage

V_FM

trr

µs

1.2

0.2

Reverse Recovery Time

I_F=0.5A, I_rp=1.0A, 25%recovery

Lead length = 3 mm

R_th(j-a)

R_th(j-l)

100

°C/W

Steady State Thermal Impedance

PDE-DFM1SD-0

12 3 4

中文翻译

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DFM1SF1	HITACHI	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon
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DFM1SF2	RENESAS	获取价格	1A, 200V, SILICON, SIGNAL DIODE
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