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DFM1SA4 PDF预览

DFM1SA4

更新时间: 2024-02-02 22:21:04
品牌 Logo 应用领域
日立 - HITACHI 二极管
页数 文件大小 规格书
4页 50K
描述
Rectifier Diode, 1 Element, 0.8A, 400V V(RRM), Silicon

DFM1SA4 技术参数

生命周期:TransferredReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.64其他特性:HIGH SPEED SWITCH
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最大输出电流:0.8 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.2 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

DFM1SA4 数据手册

 浏览型号DFM1SA4的Datasheet PDF文件第2页浏览型号DFM1SA4的Datasheet PDF文件第3页浏览型号DFM1SA4的Datasheet PDF文件第4页 
FAST RECOVERY DIODE  
DFM1SA  
FEATURES  
OUTLINE DRAWING  
For high speed switching.  
Unit in mm(inch)  
Diffused-junction. Resin encapsulated.  
Direction of polarity  
φ
0.6  
(0.024)  
Color of  
cathode band  
Type  
DFM1SA1 (100V)  
DFM1SA2 (200V)  
DFM1SA4 (400V)  
Yellow  
White  
Blue  
Weight: 0.20 (g)  
ABSOLUTE MAXIMUM RATINGS  
DFM1SA1  
100  
DFM1SA2  
DFM1SA4  
400  
Items  
Type  
200  
Repetitive Peak Reverse Voltage  
VRRM  
V
A
Single-phase half sine wave 180° conduction  
TL = 60°C, Lead length = 10mm  
Average Forward Current  
IF(AV)  
0.8  
(
)
30( Without PIV, 10ms conduction, Tj = 150°C start )  
3.6( Time = 2 ~ 10ms, I = RMS value )  
-40 ~ +150  
Surge(Non-Repetitive) Forward Current  
I2t Limit Value  
IFSM  
I2t  
A
A2s  
°C  
°C  
Operating Junction Temperature  
Storage Temperature  
Tj  
Tstg  
-40 ~ +150  
Notes (1) Lead mounting : Lead temperature 280°C max. to 3.2mm from body for 5sec. max..  
(2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 2kg, Twist 90°×1 cycle.  
CHARACTERISTICS(TL=25°C)  
Symbols  
IRRM  
Items  
Units  
Min. Typ. Max.  
Test Conditions  
20  
DFM1SA1,2  
DFM1SA4  
Peak Reverse Current  
µA  
Rated VRRM  
10  
IFM=0.8Ap, Single-phase half sine  
wave 1 cycle  
Peak Forward Voltage  
VFM  
trr  
V
µs  
1.3  
0.2  
Reverse Recovery Time  
IF=0.5A, Irp=1.0A, 25%recovery  
Lead length = 10 mm  
Rth(j-a)  
Rth(j-l)  
110  
80  
°C/W  
Steady State Thermal Impedance  
PDE-DFM1SA-0  

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