生命周期: | Transferred | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
风险等级: | 5.6 | 其他特性: | HIGH SPEED SWITCH |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | O-PALF-W2 | 元件数量: | 1 |
端子数量: | 2 | 最大输出电流: | 0.8 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | LONG FORM | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 100 V | 最大反向恢复时间: | 0.2 µs |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | AXIAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DFM1A2 | RENESAS |
获取价格 |
Rectifier Diode, 1 Element, 0.8A, 200V V(RRM), Silicon | |
DFM1D1 | RENESAS |
获取价格 |
1A, 100V, SILICON, SIGNAL DIODE | |
DFM1D1 | HITACHI |
获取价格 |
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon | |
DFM1D2 | RENESAS |
获取价格 |
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon | |
DFM1D4 | RENESAS |
获取价格 |
1A, 400V, SILICON, SIGNAL DIODE | |
DFM1D6 | RENESAS |
获取价格 |
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon | |
DFM1E2 | HITACHI |
获取价格 |
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon | |
DFM1E4 | RENESAS |
获取价格 |
1 A, 400 V, SILICON, SIGNAL DIODE | |
DFM1E4 | HITACHI |
获取价格 |
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon | |
DFM1E6 | RENESAS |
获取价格 |
1A, 600V, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-2 |