Ordering number:EN2373
DFD05T
Diffused Junction Type Silicon Diode
0.5A Power Rectifier
Features
Package Dimensions
unit:mm
· High-speed switching use.
· Plastic molded structure.
1174
· Reverse recovery time trr=0.15µs max (B, C, E, G).
trr=0.3µs max (J, L, N, R, T).
[DFD05T]
· Peak reverse voltage:V =100 to 1700V
RM
· Average rectified current I =0.5A
O
C:Cathode
A:Anode
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Symbol
Conditions
DFD05TB
100
DFD05TC
DFD05TE
DFD05TG
Unit
V
200
→
400
→
600
V
A
RM
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
I
0.5
30
→
→
→
→
Ta=50˚C
50Hz sine wave, 1cycle
O
I
→
→
A
FSM
Tj
→
→
150
˚C
˚C
Tstg
→
→
–40 to +150
Parameter
Symbol
Conditions
DFD05TJ DFD05TL DFD05TN DFD05TR
DFD05TT
Unit
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
V
800
→
1000
→
1200
→
1500
→
1700
0.5
V
A
A
RM
I
Ta=50˚C
O
I
50Hz sine wave,
1 cycle
20
→
→
→
→
FSM
Junction Temperature
Storage Temperature
Tj
125
˚C
˚C
→
→
→
→
→
→
→
→
Tstg
–40 to +150
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
1.2
Forward Voltage
Reverse Current
V
I =0.5A (B, C, E, G)
F
V
V
F
I =0.5A (J, L, N, R, T)
1.5
10
F
I
V
:At each V
µA
µs
µs
R
R
RM
Reverse Recovery Time
trr
I =2mA, V =15V (B,C, E, G)
0.15
0.3
F
R
I =2mA, VR=15V (J, L, N, R, T)
F
Reverse Recovery Time Test Circuit
Unit (resistance:Ω, capacitance:F)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)1258AT, TS No.2373-1/2