Datasheet > DFE10I600PM

DFE10I600PM

更新时间： 2024-10-04 14:56:43

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	213K
描述
FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。

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数据手册

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DFE10I600PM 数据手册

DFE10I600PM

V_RRM

I_FAV

t_rr

600V

10A

FRED

35ns

Fast Recovery Epitaxial Diode

Single Diode

Part number

DFE10I600PM

Backside: isolated

TO-220FP

Features / Advantages:

Applications:

Package:

● Planar passivated chips

● Low leakage current

● Very short recovery time

● Antiparallel diode for high frequency

switching devices

● Antisaturation diode

● Isolation Voltage:

● Industry standard outline

● RoHS compliant

2500

● Improved thermal behaviour

● Very low Irm-values

● Very soft recovery behaviour

● Avalanche voltage rated for reliable operation

● Soft reverse recovery for low EMI/RFI

● Low Irm reduces:

● Snubber diode

● Free wheeling diode

● Rectifiers in switch mode power

supplies (SMPS)

● Uninterruptible power supplies (UPS)

● Epoxy meets UL 94V-0

● Soldering pins for PCB mounting

● Base plate: Plastic overmolded tab

● Reduced weight

- Power dissipation within the diode

- Turn-on loss in the commutating switch

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

www.littelfuse.com/disclaimer-electronics.

and may not be used in, all applications. Read complete Disclaimer Notice at

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20201027c

12 3 4 5

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