Datasheet > DFD05TG

DFD05TG

更新时间： 2024-10-01 23:46:51

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数据手册

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DFD05TG 数据手册

Ordering number:EN2373

DFD05T

Diffused Junction Type Silicon Diode

0.5A Power Rectifier

Features

Package Dimensions

unit:mm

· High-speed switching use.

· Plastic molded structure.

1174

· Reverse recovery time trr=0.15µs max (B, C, E, G).

trr=0.3µs max (J, L, N, R, T).

[DFD05T]

· Peak reverse voltage:V =100 to 1700V

· Average rectified current I =0.5A

C:Cathode

A:Anode

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Peak Reverse Voltage

Symbol

Conditions

DFD05TB

100

DFD05TC

DFD05TE

DFD05TG

Unit

200

→

400

→

600

Average Recitified Current

Surge Forward Current

Junction Temperature

Storage Temperature

0.5

→

Ta=50˚C

50Hz sine wave, 1cycle

→

FSM

→

150

˚C

Tstg

→

–40 to +150

Parameter

Symbol

Conditions

DFD05TJ DFD05TL DFD05TN DFD05TR

DFD05TT

Unit

Peak Reverse Voltage

Average Recitified Current

Surge Forward Current

800

→

1000

→

1200

→

1500

→

1700

0.5

Ta=50˚C

50Hz sine wave,

1 cycle

→

FSM

Junction Temperature

Storage Temperature

125

˚C

→

Tstg

–40 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

1.2

Forward Voltage

Reverse Current

I =0.5A (B, C, E, G)

I =0.5A (J, L, N, R, T)

1.5

:At each V

µA

µs

Reverse Recovery Time

trr

I =2mA, V =15V (B,C, E, G)

0.15

0.3

I =2mA, VR=15V (J, L, N, R, T)

Reverse Recovery Time Test Circuit

Unit (resistance:Ω, capacitance:F)

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT)1258AT, TS No.2373-1/2

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