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DF5A3.3F PDF预览

DF5A3.3F

更新时间: 2024-11-21 03:03:31
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
3页 186K
描述
Diodes for Protecting against ESD

DF5A3.3F 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOD包装说明:R-PDSO-G5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.57配置:COMMON ANODE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:130 ΩJESD-30 代码:R-PDSO-G5
元件数量:4端子数量:5
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.2 W认证状态:Not Qualified
标称参考电压:3.3 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:6.06%
工作测试电流:5 mABase Number Matches:1

DF5A3.3F 数据手册

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DF5A3.3F  
TOSHIBA Diodes for Protecting against ESD  
DF5A3.3F  
Diodes for Protecting against ESD  
Unit: mm  
* This product is for protection against electrostatic discharge (ESD) only  
and is not intended for any other usage, including without limitation,  
the constant voltage diode application.  
z The mounting of two devices on an ultra-compact package allows the  
number of parts and the mounting cost to be reduced.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Power dissipation  
Symbol  
P
Rating  
Unit  
200  
125  
mW  
°C  
Junction temperature  
T
j
1.CATHODE1  
Storage temperature range  
T
stg  
55~125  
°C  
2. ANODE  
3.CATHODE2  
4.CATHODE3  
5.CATHODE4  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
JEDEC  
JEITA  
TOSHIBA  
1-3H1A  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Weight: 0.014g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Zener voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
Z
I
I
= 5 mA  
= 5 mA  
3.1  
3.3  
3.5  
130  
20  
V
Z
Z
Z
Dynamic impedance  
Reverse current  
Z
I
V
V
= 1 V  
μA  
R
R
R
Terminal capacitance  
(between Cathode and Anode)  
C
T
115  
pF  
= 0 V, f = 1 MHz  
Guaranteed Level of ESD Immunity  
Test Condition  
ESD Immunity Level  
IEC61000-4-2  
(Contact discharge)  
± 30 kV  
Criterion: No damage to device elements  
1
2007-11-21  

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