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DF5A3.6CJE(TPL3,F)

更新时间： 2024-11-09 06:48:59
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 171K
描述
DF5A3.6CJE(TPL3,F)

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DF5A3.6CJE(TPL3,F) 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.8
Base Number Matches：1

DF5A3.6CJE(TPL3,F) 数据手册

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DF5A3.6CJE  
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type  
DF5A3.6CJE  
Product for Use Only as Protection against Electrostatic  
Discharge (ESD)  
Unit: mm  
* This product is for protection against electrostatic discharge (ESD) only  
and is not intended for any other usage, including without limitation,  
the constant voltage diode application.  
z The mounting of four devices on an ultra-compact package allows the  
number of parts and the mounting cost to be reduced.  
z Low terminal capacitance : CT =52 pF (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
1.CATHODE 1  
Characteristic  
Power dissipation  
Symbol  
P
Rating  
Unit  
2. ANODE  
3.CATHODE2  
4.CATHODE3  
5.CATHODE4  
100  
150  
mW  
°C  
Junction temperature  
T
j
Storage temperature range  
T
stg  
−55~150  
°C  
JEDEC  
JEITA  
⎯
⎯
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
TOSHIBA  
1-2W1A  
Weight: 0.0062 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Zener voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
Z
I
I
= 5 mA  
= 5 mA  
3.4  
―
3.6  
―
3.8  
130  
100  
V
Ω
Z
Z
Z
Dynamic impedance  
Reverse current  
Z
I
V
V
= 1.8 V  
―
―
μA  
R
R
R
Terminal capacitance  
(between Cathode and Anode)  
C
T
= 0 V, f = 1 MHz  
⎯
52  
⎯
pF  
Guaranteed Level of ESD Immunity  
Test Condition  
ESD Immunity Level  
IEC61000-4-2  
(Contact discharge)  
± 15 kV  
Criterion: No damage to device elements  
1
2007-11-01  
123

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