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DF5A5.6CFU PDF预览

DF5A5.6CFU

更新时间: 2024-11-08 03:29:19
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管齐纳二极管测试光电二极管
页数 文件大小 规格书
3页 165K
描述
Product for Use Only as Protection against Electrostatic Discharge (ESD).

DF5A5.6CFU 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOD包装说明:R-PDSO-G5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.53Is Samacsys:N
配置:COMMON ANODE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:40 Ω
JESD-30 代码:R-PDSO-G5元件数量:4
端子数量:5最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.2 W
认证状态:Not Qualified标称参考电压:5.6 V
子类别:Voltage Reference Diodes表面贴装:YES
技术:ZENER端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:6.19%工作测试电流:5 mA
Base Number Matches:1

DF5A5.6CFU 数据手册

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DF5A5.6CFU  
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type  
DF5A5.6CFU  
Product for Use Only as Protection against Electrostatic  
Discharge (ESD).  
Unit: mm  
* This product is for protection against electrostatic discharge (ESD)  
only and is not intended for any other usage, including without  
limitation, the constant voltage diode application.  
z The mounting of four devices on an ultra-compact package allows the  
number of parts and the mounting cost to be reduced.  
z Low terminal capacitance: C = 29 pF (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Power dissipation  
Symbol  
P
Rating  
Unit  
1.CATHODE 1  
2. ANODE  
3.CATHODE2  
4.CATHODE3  
5.CATHODE4  
200  
150  
mW  
°C  
Junction temperature  
T
j
Storage temperature range  
T
stg  
55~150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TOSHIBA  
1-2V1B  
Weight: 0.0062 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Zener voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
Z
I
I
= 5 mA  
= 5 mA  
5.3  
5.6  
6.0  
40  
V
Ω
Z
Z
Z
Dynamic impedance  
Reverse current  
Z
I
V
V
= 3.5 V  
1.0  
μA  
R
R
R
Terminal capacitance  
(between Cathode and Anode)  
C
T
= 0 V, f = 1 MHz  
29  
pF  
Guaranteed Level of ESD Immunity  
Test Condition  
ESD Immunity Level  
IEC61000-4-2  
(Contact discharge)  
± 30 kV  
Criterion: No damage to device elements  
1
2007-11-01  

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