Datasheet > DF5A3.6CJE(TE85L,F)

DF5A3.6CJE(TE85L,F)

更新时间： 2024-11-22 07:21:39

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东芝 - TOSHIBA		/
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DF5A3.6CJE(TE85L,F)

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DF5A3.6CJE(TE85L,F) 数据手册

DF5A3.6CJE

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

DF5A3.6CJE

Product for Use Only as Protection against Electrostatic

Discharge (ESD)

Unit: mm

* This product is for protection against electrostatic discharge (ESD) only

and is not intended for any other usage, including without limitation,

the constant voltage diode application.

z The mounting of four devices on an ultra-compact package allows the

number of parts and the mounting cost to be reduced.

z Low terminal capacitance : C_T=52 pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

1.CATHODE 1

Characteristic

Power dissipation

Symbol

Rating

Unit

2. ANODE

3.CATHODE2

4.CATHODE3

5.CATHODE4

100

150

°C

Junction temperature

Storage temperature range

stg

−55~150

°C

JEDEC

JEITA

⎯

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

TOSHIBA

1-2W1A

Weight: 0.0062 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristic

Zener voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 5 mA

3.4

―

3.6

―

3.8

130

100

Dynamic impedance

Reverse current

= 1.8 V

―

μA

Terminal capacitance

(between Cathode and Anode)

= 0 V, f = 1 MHz

⎯

Guaranteed Level of ESD Immunity

Test Condition

ESD Immunity Level

IEC61000-4-2

(Contact discharge)

± 15 kV

Criterion: No damage to device elements

2007-11-01

12 3

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