Datasheet > DF5A3.3FU

DF5A3.3FU

更新时间： 2024-09-21 03:03:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
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3页	163K
描述
Product for Use Only as Protection against Electrostatic Discharge (ESD)

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DF5A3.3FU 数据手册

DF5A3.3FU

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

DF5A3.3FU

Product for Use Only as Protection against Electrostatic

Discharge (ESD)

Unit: mm

* This product is for protection against electrostatic discharge (ESD) only

and is not intended for any other usage, including without limitation,

the constant voltage diode application.

z The mounting of four devices on an ultra-compact package allows the

number of parts and the mounting cost to be reduced.

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Power dissipation

Symbol

Rating

Unit

200

125

°C

1.CATHODE 1

2. ANODE

Junction temperature

3.CATHODE2

4.CATHODE3

5.CATHODE4

Storage temperature range

−55~125

°C

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

JEDEC

JEITA

⎯

TOSHIBA

1-2V1B

Weight: 0.0062g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristic

Zener voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 5 mA

3.1

―

3.3

―

3.5

130

Ω

Dynamic impedance

Reverse current

= 1 V

―

μA

Terminal capacitance

(between Cathode and Anode)

―

115

―

= 0 V, f = 1 MHz

Guaranteed Level of ESD Immunity

Test Condition

ESD Immunity Level

IEC61000-4-2

(Contact discharge)

± 30 kV

Criterion: No damage to device elements

2007-11-01

12 3

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