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DF10M PDF预览

DF10M

更新时间: 2024-11-20 22:40:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 整流二极管桥式整流二极管
页数 文件大小 规格书
4页 70K
描述
Bridge Rectifiers

DF10M 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DIP
包装说明:DIP-4针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.21
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:831187Samacsys Pin Count:4
Samacsys Part Category:Bridge RectifierSamacsys Package Category:Dual-In-Line Packages
Samacsys Footprint Name:DF10MSamacsys Released Date:2019-05-30 10:55:23
Is Samacsys:N其他特性:LOW LEAKAGE, UL RECOGNIZED
最小击穿电压:1000 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:R-PDIP-T4
JESD-609代码:e3最大非重复峰值正向电流:50 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:3.1 W认证状态:Not Qualified
最大重复峰值反向电压:1000 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DF10M 数据手册

 浏览型号DF10M的Datasheet PDF文件第2页浏览型号DF10M的Datasheet PDF文件第3页浏览型号DF10M的Datasheet PDF文件第4页 
DF005M - DF10M  
Features  
Surge overload rating: 50 amperes  
peak.  
Glass passivated junction.  
Low leakage.  
UL certified, UL #E111753.  
DIP  
Bridge Rectifiers  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Value  
Symbol  
Parameter  
Units  
005M 01M 02M 04M 06M 08M 10M  
VRRM  
VRMS  
VR  
Maximum Repetitive Reverse Voltage  
Maximum RMS Bridge Input Voltage  
50  
35  
50  
100 200 400 600 800 1000  
70 140 280 420 560 700  
V
V
V
DC Reverse Voltage  
(Rated VR)  
100 200 400 600 800 1000  
IF(AV)  
Average Rectified Forward Current,  
@ TA = 40°C  
Non-repetitive Peak Forward Surge Current  
8.3 ms Single Half-Sine-Wave  
Storage Temperature Range  
1.5  
A
A
IFSM  
50  
-55 to +150  
-55 to +150  
C
C
Tstg  
TJ  
°
Operating Junction Temperature  
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
3.1  
40  
W
Thermal Resistance, Junction to Ambient,*  
per leg  
RθJA  
C/W  
°
*Device mounted on PCB with 0.5 x 0.5" (13 x 13 mm).  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Device  
Units  
VF  
IR  
Forward Voltage, per bridge @ 1.0 A  
1.1  
V
Reverse Current, total bridge @ rated VR  
5.0  
500  
µA  
TA = 25°C  
A
µ
T = 125 C  
°
A
I2t rating for fusing  
t < 8.35 ms  
10  
25  
A2s  
CT  
Total Capacitance, per leg  
VR = 4.0 V, f = 1.0 MHz  
pF  
2001 Fairchild Semiconductor Corporation  
DF005M-DF10M, Rev. C  

DF10M 替代型号

型号 品牌 替代类型 描述 数据表
DF10M ONSEMI

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