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DF10M/45 PDF预览

DF10M/45

更新时间： 2024-11-05 14:50:43
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 83K
描述
Bridge Rectifier Diode, 1A, 1000V V(RRM),

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DF10M/45 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.8Is Samacsys：N
配置：BRIDGE, 4 ELEMENTS二极管类型：BRIDGE RECTIFIER DIODE
最大正向电压 (VF)：1.1 V最大非重复峰值正向电流：50 A
元件数量：4最高工作温度：150 °C
最大输出电流：1 A最大重复峰值反向电压：1000 V
子类别：Bridge Rectifier Diodes表面贴装：NO
Base Number Matches：1

DF10M/45 数据手册

 浏览型号DF10M/45的Datasheet PDF文件第2页浏览型号DF10M/45的Datasheet PDF文件第3页浏览型号DF10M/45的Datasheet PDF文件第4页 
DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M  
www.vishay.com  
Vishay General Semiconductor  
Miniature Glass Passivated Single-Phase Bridge Rectifiers  
FEATURES  
• UL recognition, file number E54214  
• Ideal for printed circuit boards  
• Applicable for automative insertion  
• High surge current capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
~
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
~
~
TYPICAL APPLICATIONS  
General purpose use in AC/DC bridge full wave rectification  
~
for SMPS, lighting ballaster, adapter, battery charger, home  
appliances, office equipment, and telecommunication  
applications.  
Case Style DFM  
PRIMARY CHARACTERISTICS  
Package  
DFM  
1 A  
MECHANICAL DATA  
IF(AV)  
Case: DFM  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V, 1000 V  
VRRM  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
IFSM  
IR  
50 A  
5 μA  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
VF at IF = 1.0 A  
TJ max.  
1.1 V  
150 °C  
Quad  
Polarity: As marked on body  
Diode variations  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT  
Device marking code  
DF005  
50  
DF01  
100  
70  
DF02  
200  
DF04  
400  
DF06  
600  
DF08  
800  
DF10  
1000  
700  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
35  
140  
280  
420  
560  
Maximum DC blocking voltage  
50  
100  
200  
400  
600  
800  
1000  
Maximum average forward output rectified current  
at TA = 40 °C  
IF(AV)  
1.0  
50  
A
Peak forward surge current single sine-wave  
superimposed on rated load  
IFSM  
I2t  
A
Rating for fusing (t < 8.3 ms)  
10  
A2s  
°C  
Operating junction and storage temperature range TJ, TSTG  
- 55 to + 150  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT  
Maximum instantaneous  
forward voltage drop per diode  
1.0 A  
VF  
IR  
1.1  
V
Maximum reverse current at  
rated DC blocking voltage per  
diode  
TA = 25 °C  
5.0  
μA  
pF  
TA = 125 °C  
500  
Typical junction capacitance  
per diode  
4.0 V, 1 MHz  
CJ  
25  
Revision: 16-Aug-13  
Document Number: 88571  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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