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DF10M-T-F PDF预览

DF10M-T-F

更新时间: 2024-11-05 13:07:19
品牌 Logo 应用领域
美台 - DIODES 整流二极管桥式整流二极管
页数 文件大小 规格书
2页 64K
描述
Bridge Rectifier Diode, 1 Phase, 1A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DF-M, 4 PIN

DF10M-T-F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDIP-T4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.05其他特性:UL RECOGNIZED
最小击穿电压:1000 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PDIP-T4JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:50 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:1000 V
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

DF10M-T-F 数据手册

 浏览型号DF10M-T-F的Datasheet PDF文件第2页 
DF005M - DF10M  
1.0A GLASS PASSIVATED BRIDGE RECTIFIERS  
Features  
·
·
·
Glass Passivated Die Construction  
Diffused Junction  
Low Forward Voltage Drop, High Current  
Capability  
DF-M  
C
·
·
·
Surge Overload Rating to 50A Peak  
Designed for Printed Circuit Board Applications  
Plastic Material - UL Flammability  
Classification 94V-0  
UL Listed Under Recognized Component Index,  
File Number E94661  
Dim  
A
Min  
7.40  
6.20  
0.22  
1.27  
7.60  
3.81  
8.13  
2.40  
5.00  
0.46  
Max  
7.90  
6.50  
0.30  
2.03  
8.90  
4.69  
8.51  
2.60  
5.20  
0.58  
B
D
A
E
B
C
·
D
H
E
Mechanical Data  
G
H
J
·
·
Case: Molded Plastic  
Terminals: Solder Plated Leads,  
Solderable per MIL-STD-202, Method 208  
Polarity: As Marked on Case  
Approx. Weight: 0.38 grams  
Mounting Position: Any  
G
L
J
K
K
·
·
·
·
L
All Dimensions in mm  
Marking: Type Number  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
DF  
005M  
DF  
01M  
DF  
02M  
DF  
04M  
DF  
06M  
DF  
08M  
DF  
10M  
Characteristic  
Symbol  
Unit  
VRMM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
100  
70  
200  
140  
400  
600  
420  
800  
580  
1000  
700  
V
VRMS  
IO  
RMS Reverse Voltage  
35  
280  
1.0  
V
A
Average Rectified Output Current  
@ TA = 40°C  
Non-Repetitive Peak Forward Surge Current, 8.3 ms  
single half-sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
50  
A
Forward Voltage (per element)  
@ IF = 1.0 A  
VFM  
IRM  
1.1  
V
Peak Reverse Current  
at Rated DC Blocking Voltage (per element) @ TA = 125°C  
I2t Rating for Fusing (t<8.3ms)  
@ TA = 25°C  
10  
500  
µA  
I2t  
Cj  
10.4  
25  
A2s  
pF  
Typical Junction Capacitance per element (Note 1)  
Typical Thermal Resistance, Junction to Ambient (Note 2)  
Operating and Storage Temperature Range  
RqJA  
Tj, TSTG  
40  
°C/W  
°C  
-65 to +150  
Notes:  
1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.  
2. Thermal Resistance, junction to ambient, measured on PC board with 5.02mm (0.03mm thick) land areas.  
DS21201 Rev. H-2  
1 of 2  
DF005M-DF10M  

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