5秒后页面跳转
DF10MTR16 PDF预览

DF10MTR16

更新时间: 2024-09-19 15:30:51
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管
页数 文件大小 规格书
4页 504K
描述
Bridge Rectifier Diode, 1 Phase, 1A, 1000V V(RRM), Silicon

DF10MTR16 数据手册

 浏览型号DF10MTR16的Datasheet PDF文件第2页浏览型号DF10MTR16的Datasheet PDF文件第3页浏览型号DF10MTR16的Datasheet PDF文件第4页 
PART OBSOLETE - EOL18  
Bulletin U2788 rev. G 04/03  
DF SERIES  
1A Single Phase D.I.L. Rectifier Bridge  
Features  
• Glass passivated chips  
• Leads on standard 0.1" grid  
• Suitable for automatic insertion  
+
IO(av) = 1.0 A  
VRRM range  
50 to 1000V  
IO(av)  
• High surge current capability  
• Fully characterised data  
~
~
-
• Wide temperature range  
• Surface mount option  
• Lead free terminals solderable as per  
MIL-STD-750 Method 2026  
• High temperature soldering guaranteed 260°C/8-10 secs  
• Polarity symbols marked on the case  
• UL E160375 approved  
Description  
The DF Series of Single Phase Rectifier Bridges  
consists of four silicon junctions encapsulated in a 4  
pin D.I.L. package. These devices are intended for  
general use in industrial and consumer equipment.  
Electrical Specification  
DF...  
Units Conditions  
IO  
Maximum DC output  
current  
1.0  
0.8  
30  
A
A
A
A
Tamb = 40oC, Resistive or inductive load  
T
amb = 40oC, Capacitive load  
IFSM  
Maximum peak one  
cycle, non-repetitive  
surge current  
t = 10ms, 20ms  
t = 8.3ms, 16.7ms  
Following any rated  
load condition and with  
rated VRRM reapplied  
Initial TJ = TJ max  
100% VRRM reapplied  
Initial TJ = TJ max  
31  
I2t  
Maximum I2t capability  
for fusing  
4.5  
4.1  
6.4  
5.8  
64  
A2s  
A2s  
A2s  
A2s  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
no voltage reapplied  
I2t  
VFM  
IRM  
f
Maximum I2t  
A2s t = 0.1 to 10ms, no voltage reapplied  
capability for fusing  
Maximum peak forward  
voltage per diode  
Typical peak reverse  
leakage per diode  
Operating frequency  
range  
1.0  
V
IFM = 1.0A, TJ = 25oC  
5
100  
50 to 1000  
µA  
µA  
Hz  
TJ = 25oC, 100% VRRM  
TJ = 150oC, 100% VRRM  
VRRM  
Maximum repetitive peak  
reverse voltage range  
50 to 1000  
V
Thermal and Mechanical Specifications  
DF...  
Units Conditions  
TJ  
Operating and storage  
temperature range  
Thermal resistance,  
junctions to ambient  
Approximate weight  
- 55 to 150  
oC  
Tstg  
RthJA  
60  
K/W  
W
0.6 (0.02)  
g (oz)  
1
www.irf.com  

与DF10MTR16相关器件

型号 品牌 获取价格 描述 数据表
DF10MTR16PBF INFINEON

获取价格

Bridge Rectifier Diode, 1 Phase, 1A, 1000V V(RRM), Silicon
DF10MTRR16 INFINEON

获取价格

Bridge Rectifier Diode, 1 Phase, 1A, 1000V V(RRM), Silicon, DIP-4
DF10NC15 SHINDENGEN

获取价格

Schottky Barrier Diode
DF10S MIC

获取价格

SURFACE MOUNT BRIDGE
DF10S CHENG-YI

获取价格

SINGLE-PHASE GLASS BRIDGE
DF10S GOOD-ARK

获取价格

SINGLE PHASE 1.0AMP GLASS PASSIVATED BRIDGE RECTIFIERS
DF10S DIODES

获取价格

1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
DF10S WTE

获取价格

1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
DF10S VISHAY

获取价格

MINIATURE GLASS PASSIVATED SINGLE-PHASE SURFACE MOUNT BRIDGE RECTIFIER
DF10S SSE

获取价格

SINGLE PHASE GLASS PASSIVATED SURFACE MOUNT BRIDGE RECTIFIER