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DDB2265-220 PDF预览

DDB2265-220

更新时间： 2024-11-05 19:09:11
品牌 Logo 应用领域
思佳讯 - SKYWORKS 二极管
页数 文件大小 规格书
6页 82K
描述
Mixer Diode, Low Barrier, 1200ohm Z(V) Max, Silicon, ROHS COMPLIANT, HERMETIC SEALED, CASE 220, 2 PIN

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中文翻译

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DDB2265-220 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：S-CDMW-F2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.60
风险等级：5.27其他特性：LOW NOISE
配置：SINGLE二极管元件材料：SILICON
二极管类型：MIXER DIODE最大阻抗：1200 Ω
最小阻抗：800 ΩJESD-30 代码：S-CDMW-F2
湿度敏感等级：1元件数量：1
端子数量：2最大工作频率：26 GHz
最小工作频率：18 GHz封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：SQUARE封装形式：MICROWAVE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
子类别：Other Diodes表面贴装：YES
最小正切信号灵敏度：50 dBm技术：SCHOTTKY
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：40肖特基势垒类型：LOW BARRIER
Base Number Matches：1

DDB2265-220 数据手册

 浏览型号DDB2265-220的Datasheet PDF文件第2页浏览型号DDB2265-220的Datasheet PDF文件第3页浏览型号DDB2265-220的Datasheet PDF文件第4页浏览型号DDB2265-220的Datasheet PDF文件第5页浏览型号DDB2265-220的Datasheet PDF文件第6页 
Silicon Schottky Barrier Detector Diodes  
Features  
3
Both P–Type and N–Type Low Barrier Silicon  
Available  
Low 1/f Noise  
Bonded Junctions for Reliability  
Planar Passivated Beam–Lead and Chip  
Construction  
See Also Zero Bias Silicon Schottky Barrier  
Detector Diodes  
Description  
Alpha packaged, beam–lead and chip Schottky  
barrier detector diodes are designed for applications  
through 40 GHz in Ka–band. They are made by the  
deposition of a suitable barrier metal on an epitaxial  
silicon substrate to form the junction. The process  
and choice of materials result in low series resistance  
along with a narrow spread of capacitance values for  
close impedance control. P–type silicon is used to  
obtain superior 1/f noise characteristics. N–type  
silicon is also available.  
The “Universal Chips” are designed for a high degree  
of device reliability in both commercial and industrial  
uses. The offset bond pad assures that no  
mechanical damage will occur at the junction during  
the wire bonding. Additionally the 4 mil bond pad  
eliminates performance variation due to bonding and  
is ideal for automated assembly, and improves  
efficiency during manual operations as well.  
The choice on “N” and “P” type silicon allows for the  
designer to optimize the silicon material for the  
intended application.  
The packaged diodes are suitable for use in  
waveguide, coaxial, and stripline applications.  
The beam–lead and chip diodes can also be mounted  
in a variety of packages or on special customer  
substrates.  
Doppler mixers, high sensitivity detectors will  
benefit from using the low noise characteristics  
of the “P” type silicon.  
Unmounted beam–lead diodes are especially well  
suited for use in MIC applications. Mounted  
beam–lead diodes can be easily used in MIC,  
stripline or other such circuitry.  
Low conversion loss mixers and biased  
detectors can be designed using standard “N”  
type material.  
Alpha Industries • [617] 935Ć5150 • Fax [617] 824Ć4579 • E-mail sales@alphaind.com • Visit our web site: www.alphaind.com  
3–33  
123456

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 		Mixer Diode, Low Barrier, 700ohm Z(V) Max, Silicon, ROHS COMPLIANT, PLASTIC, CASE 230, 2 P
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