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DDB2503-000 PDF预览

DDB2503-000

更新时间： 2024-11-05 19:09:11
品牌 Logo 应用领域
思佳讯 - SKYWORKS 二极管
页数 文件大小 规格书
6页 82K
描述
Mixer Diode, Low Barrier, X Band, 700ohm Z(V) Max, Silicon, ROHS COMPLIANT, CASE 491-006, 2 PIN

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中文翻译

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DDB2503-000 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active包装说明：R-CDMW-F2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.60
风险等级：5.28Is Samacsys：N
其他特性：LOW NOISE最小击穿电压：2 V
配置：SINGLE最大二极管电容：0.15 pF
二极管元件材料：SILICON二极管类型：MIXER DIODE
最大正向电压 (VF)：0.35 V频带：X BAND
最大阻抗：700 Ω最小阻抗：500 Ω
JESD-30 代码：R-CDMW-F2湿度敏感等级：1
元件数量：1端子数量：2
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：MICROWAVE峰值回流温度（摄氏度）：260
认证状态：Not Qualified表面贴装：YES
技术：SCHOTTKY端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

DDB2503-000 数据手册

 浏览型号DDB2503-000的Datasheet PDF文件第2页浏览型号DDB2503-000的Datasheet PDF文件第3页浏览型号DDB2503-000的Datasheet PDF文件第4页浏览型号DDB2503-000的Datasheet PDF文件第5页浏览型号DDB2503-000的Datasheet PDF文件第6页 
Silicon Schottky Barrier Detector Diodes  
Features  
3
Both P–Type and N–Type Low Barrier Silicon  
Available  
Low 1/f Noise  
Bonded Junctions for Reliability  
Planar Passivated Beam–Lead and Chip  
Construction  
See Also Zero Bias Silicon Schottky Barrier  
Detector Diodes  
Description  
Alpha packaged, beam–lead and chip Schottky  
barrier detector diodes are designed for applications  
through 40 GHz in Ka–band. They are made by the  
deposition of a suitable barrier metal on an epitaxial  
silicon substrate to form the junction. The process  
and choice of materials result in low series resistance  
along with a narrow spread of capacitance values for  
close impedance control. P–type silicon is used to  
obtain superior 1/f noise characteristics. N–type  
silicon is also available.  
The “Universal Chips” are designed for a high degree  
of device reliability in both commercial and industrial  
uses. The offset bond pad assures that no  
mechanical damage will occur at the junction during  
the wire bonding. Additionally the 4 mil bond pad  
eliminates performance variation due to bonding and  
is ideal for automated assembly, and improves  
efficiency during manual operations as well.  
The choice on “N” and “P” type silicon allows for the  
designer to optimize the silicon material for the  
intended application.  
The packaged diodes are suitable for use in  
waveguide, coaxial, and stripline applications.  
The beam–lead and chip diodes can also be mounted  
in a variety of packages or on special customer  
substrates.  
Doppler mixers, high sensitivity detectors will  
benefit from using the low noise characteristics  
of the “P” type silicon.  
Unmounted beam–lead diodes are especially well  
suited for use in MIC applications. Mounted  
beam–lead diodes can be easily used in MIC,  
stripline or other such circuitry.  
Low conversion loss mixers and biased  
detectors can be designed using standard “N”  
type material.  
Alpha Industries • [617] 935Ć5150 • Fax [617] 824Ć4579 • E-mail sales@alphaind.com • Visit our web site: www.alphaind.com  
3–33  
123456

中文翻译

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