Datasheet > DCR150-8

DCR150-8

更新时间： 2024-09-16 04:14:15

品牌	Logo	应用领域
DCCOM		可控硅整流器
页数	文件大小	规格书
1页	50K
描述
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 200 to 600 Volts

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DCR150-8 数据手册

DCR150-4

THRU

DCR150-8

DC COMPONENTS CO., LTD.

DISCRETE SEMICONDUCTORS

TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS

VOLTAGE RANGE - 200 to 600 Volts

CURRENT - 1.5 Amperes

Description

* Driven directly with IC and MOS device

* Feature proprietary, void-free glass passivated chips

* Available in voltage ratings from 200 to 600 volts

* Sensitive gate trigger current

* Designed for high volume, line-powered control

application in relay lamp drivers, small motor controls,

gate drivers for large thyristors

TO-92

.190(4.83)

.170(4.33)

Pinning

1 = Cathode, 2 = Gate, 3 = Anode

2oTyp

.190(4.83)

.170(4.33)

Absolute Maximum Ratings(TA=25oC)

.500

(12.70)

Min

Characteristic

Symbol

Rating

Unit

Peak Repetitive Off-State

Voltage and Reverse Voltage

DCR150-4 VDRM,

200

400

600

.022(0.56)

.014(0.36)

.022(0.56)

.014(0.36)

DCR150-6

DCR150-8

VRRM

IT(RMS)

ITSM

.050

(1.27)

Typ

.100

Typ

(2.54)

On-State RMS Current

(TA=57oC, 180o Conduction Angles)

1.5

Peak Non-repetitive Surge Current

(1/2 Cycle, Sine Wave 60Hz)

.148(3.76)

.132(3.36)

3 2 1

Forward Peak Gate Current

IGM

PGM

PG(AV)

1.0

0.1

Forward Peak Gate Power Dissipation

Forward Average Gate Power Dissipation

Operating Junction Temperature

Storage Temperature

.050

Typ

(1.27)

5oTyp

0.01

-40 to +110

-40 to +150

Dimensions in inches and (millimeters)

TSTG

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified)

Characteristic

Peak Repetitive Forward or Reverse

Off-State Blocking Current

Symbol

Min

Typ

Max

200

1.7

200

0.8

5.0

Unit

Test Conditions

VAK=Rated VDRM or VRRM

RGK=1KΩ

TJ=25oC

IDRM, IRRM

µA

TJ=110oC

Peak Forward On-State Voltage

Continuous DC Gate Trigger Current

Continuous DC Gate Trigger Voltage

DC Holding Current

VTM

IGT

µA

ITM=1A Peak

VAK=7V DC, RL=100Ω

RGK=1KΩ

VGT

Critical Rate-of-Rise of Off-State Voltage

Gate Controlled Turn-on Time(tD+tR)

Thermal Resistance, Junction to Case

dv/dt

Tgt

3.5

V/µS

µsec

oC/W

RGK=1KΩ

IGT=10mA

RθJC

中文翻译

下载PDF

与DCR150-8相关器件

型号	品牌	获取价格	描述	数据表
DCR1560F20	DYNEX	获取价格	Phase Control Thyristor
DCR1560F22	DYNEX	获取价格	Phase Control Thyristor
DCR1560F24	DYNEX	获取价格	Phase Control Thyristor
DCR1560F26	DYNEX	获取价格	Phase Control Thyristor
DCR1570L50	DYNEX	获取价格	Phase Control Thyristor
DCR1570L55	DYNEX	获取价格	Phase Control Thyristor
DCR1570L60	DYNEX	获取价格	Phase Control Thyristor
DCR1570L65	DYNEX	获取价格	Phase Control Thyristor
DCR1574SV	ETC	获取价格	Phase Control Thyristors (SCR) - Disc / Puk Devices
DCR1574SV28	LGE	获取价格	Phase Control Thyristor