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DB104S PDF预览

DB104S

更新时间: 2024-01-24 07:09:14
品牌 Logo 应用领域
鲁光 - LGE /
页数 文件大小 规格书
2页 159K
描述
Silicon Bridge Rectifiers

DB104S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.27其他特性:UL RECOGNIZED
最小击穿电压:400 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
最大非重复峰值正向电流:30 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):265认证状态:Not Qualified
最大重复峰值反向电压:400 V表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED

DB104S 数据手册

 浏览型号DB104S的Datasheet PDF文件第2页 
DB101S-DB107S  
Silicon Bridge Rectifiers  
VOLTAGE RANGE: 50 --- 1000 V  
CURRENT: 1.0 A  
DB-S  
Features  
Rating to 1000V PRV  
1± 0.1  
7.9± 0.2  
Surge overload rating to 30 Amperes peak  
Ideal for printed circuit board  
6.4± 0.1  
1.2± 0.3  
10± 0.6  
Reliable low cost construction utilizing molded  
plastic technique results in inexpensive product  
8.3± 0.1  
5± 0.2  
Lead solderable per MIL-STD-202 method 208  
Lead: silver plated copper, solderde plated  
Plastic material has UL flammabilityclassification  
94V-O  
Dimensions in millimeters  
Polaritysymbols molded on body  
Weight: 0.016 ounces,0.45 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
DB DB  
101S 102S  
DB  
DB  
DB  
DB  
DB  
UNITS  
103S 104S 105S 106S 107S  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
Maximum average f orw ard  
100  
1000  
1.0  
A
IF(AV)  
Output current  
@TA=40  
Peak forw ard surge current  
8.3ms single half-sine-w ave  
superimposed on rated load  
IFSM  
30.0  
1.1  
A
V
Maximum instantaneous f orw ard voltage  
at 1.0 A  
VF  
IR  
Maximum reverse current  
@TA=25  
10.0  
1.0  
μ
A
at rated DC blocking voltage @TA=100  
Operating junction temperature range  
Storage temperature range  
m A  
- 55 ---- + 150  
TJ  
TSTG  
- 55 ---- + 150  
http://www.luguang.cn  
mail:lge@luguang.cn  

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