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DB104ST-G PDF预览

DB104ST-G

更新时间: 2024-11-09 07:18:03
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上华 - COMCHIP /
页数 文件大小 规格书
4页 96K
描述
SMD Glass Passivated Bridge Rectifiers

DB104ST-G 数据手册

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SMD Glass Passivated Bridge Rectifiers  
DB101S-G Thru. DB107S-G  
Reverse Voltage: 50 to 1000V  
Forward Current: 1.0A  
RoHS Device  
Features  
DBS  
-Rating to 1000V PRV  
-Ideal for printed circuit board  
0.205(5.2)  
0.197(5.0)  
-Low forward voltage drop,high current capability  
0.335(8.50)  
0.307(7.80)  
-
+
~
-Reliable low cost construction utilizing molded plastic  
technique results in inexpensive product  
-Lead tin Pb/Sn copper  
0.256(6.5)  
0.244(6.2)  
~
0.406(10.3)  
0.394(10.0)  
0.047(1.20)  
0.037(0.95)  
-The plastic material has UL flammability  
classification 94V-0  
0.014(0.35)  
0.008(0.20)  
0.346(8.8)  
0.323(8.2)  
Mechanical Data  
-Polarit:As marked on Body  
0.134(3.40)  
0.124(3.15)  
0.063(1.6)  
0.055(1.4)  
-Weight: 0.51 grams  
Dimensions in inches and (millimeter)  
-Mounting position:Any  
Maximum ratings and electrical characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
DB  
DB  
DB  
DB  
DB  
DB  
DB  
Symbol  
Parameter  
Unit  
101S-G 102S-G 103S-G 104S-G 105S-G 106S-G 107S-G  
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum Reverse Peak Repetitive Voltage  
Maximum RMS Voltage  
V
V
DC  
100  
1000  
Maximum DC Blocking Voltage  
Maximum Average Forward  
I(AV)  
1.0  
50  
A
A
Rectified Current @T =40°C  
A
Peak Forward Surage Current ,  
8.3ms Single Half Sine-Wave  
Super Imposed On Rated Load  
IFSM  
I2 t Rating For Fusing (t8.3ms)  
I 2 t  
10.4  
1.1  
A2 s  
V
Maximum Forward Voltage At 1.0A DC  
VF  
Maximum Reverse Current  
At rRated DC Blocking Voltage  
@TJ=25°C  
10  
500  
μA  
IR  
@T =125°C  
J
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
Operating Temperature Range  
Storage Temperature Range  
C
J
25  
pF  
°C/W  
°C  
R
θJA  
40  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
Notes:  
1. Measured at 1.0MHz and applied reverse voltage of 4.0V.  
2. Unit mounted on P.C.B with 0.51"×0.51" (13×13mm) copper pads.  
REV:B  
Page 1  
QW-BBR50  
Comchip Technology CO., LTD.  

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