SMD Glass Passivated Bridge Rectifiers
DB101S-G Thru. DB107S-G
Reverse Voltage: 50 to 1000V
Forward Current: 1.0A
RoHS Device
Features
DBS
-Rating to 1000V PRV
-Ideal for printed circuit board
0.205(5.2)
0.197(5.0)
-Low forward voltage drop,high current capability
0.335(8.50)
0.307(7.80)
-
+
~
-Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
-Lead tin Pb/Sn copper
0.256(6.5)
0.244(6.2)
~
0.406(10.3)
0.394(10.0)
0.047(1.20)
0.037(0.95)
-The plastic material has UL flammability
classification 94V-0
0.014(0.35)
0.008(0.20)
0.346(8.8)
0.323(8.2)
Mechanical Data
-Polarit:As marked on Body
0.134(3.40)
0.124(3.15)
0.063(1.6)
0.055(1.4)
-Weight: 0.51 grams
Dimensions in inches and (millimeter)
-Mounting position:Any
Maximum ratings and electrical characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
DB
DB
DB
DB
DB
DB
DB
Symbol
Parameter
Unit
101S-G 102S-G 103S-G 104S-G 105S-G 106S-G 107S-G
V
RRM
RMS
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
Maximum Reverse Peak Repetitive Voltage
Maximum RMS Voltage
V
V
DC
100
1000
Maximum DC Blocking Voltage
Maximum Average Forward
I(AV)
1.0
50
A
A
Rectified Current @T =40°C
A
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load
IFSM
I2 t Rating For Fusing (t<8.3ms)
I 2 t
10.4
1.1
A2 s
V
Maximum Forward Voltage At 1.0A DC
VF
Maximum Reverse Current
At rRated DC Blocking Voltage
@TJ=25°C
10
500
μA
IR
@T =125°C
J
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
C
J
25
pF
°C/W
°C
R
θJA
40
TJ
-55 ~ +150
-55 ~ +150
TSTG
°C
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V.
2. Unit mounted on P.C.B with 0.51"×0.51" (13×13mm) copper pads.
REV:B
Page 1
QW-BBR50
Comchip Technology CO., LTD.