Datasheet > DB105

DB105

更新时间： 2024-02-11 09:16:39

品牌	Logo	应用领域
UNIOHM		/
页数	文件大小	规格书
4页	119K
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SILICON BRIDGE RECTIFIERS

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DB105 技术参数

生命周期：	Obsolete	包装说明：	R-PDIP-W4
针数：	4	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.82	配置：	BRIDGE, 4 ELEMENTS
二极管元件材料：	SILICON	二极管类型：	BRIDGE RECTIFIER DIODE
JESD-30 代码：	R-PDIP-W4	最大非重复峰值正向电流：	30 A
元件数量：	4	相数：	1
端子数量：	4	最大输出电流：	1 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	IN-LINE	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	WIRE
端子位置：	DUAL

DB105 数据手册

GALAXY ELECTRICAL

1N6267- - -1N6303A

BREAKDOWN VOLTAGE: 6.8 --- 200 V

PEAK PULSE POWER: 1500 W

TRANSIENT VOLTAGE SUPPRESSOR

FEATURES

Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

DO-201AE

Glass passivated junction

1500W peak pulse power capability with a 10/1000μs

waveform, repetition rate (duty cycle): 0.05%

Excellent clamping capability

Low incremental surge resistance

Fast response time: typically less than 1.0ps from 0 Volts to

V^(BR)for uni-directional and 5.0ns for bi-directional types

For devices with V(BR) 10V,ID are typically less than 1.0μA

High temperature soldering guaranteed:265 / 10 seconds,

0.375"(9.5mm) lead length, 51bs. (2.3kg) tension

MECHANICAL DATA

Case:JEDEC DO-201AE, molded plastic

Polarity: Color band denotes positive end

( cathode ) except for bidirectional

Weight: 0.032 ounces, 0.9 grams

Mounting position: Any

DEVICES FOR BIDIRECTIONAL APPLICATIONS

For bi-directional use C or CA suffixfor types 1N6267 thru types 1N6303A (e.g. 1N6267, 1N6303A).

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

SYMBOL

P_PPM

VALUE

UNIT

Peak pow er dissipation w ith a 10/1000μs w aveform (NOTE1, FIG.1)

Peak pulse current w ith a 10/1000μs w aveform (NOTE1)

Minimum 1500

SEE TABLE 1

I_PPM

Steady state pow er dissipation at T_L=75

ffffflead lengths 0.375"(9.5mm) (NOTE2)

P_M(AV)

I_FSM

6.5

Peak forw ard surge current, 8.3ms single half

ffffsine-w ave superimposed on rated load (JEDEC Method) (NOTE3)

200.0

Maximum instantaneous forw ard voltage at 100 A for unidirectional only (NOTE4)

Typical thermal resistance junction-to-lead

V_F

R_θ_JL

3.5/5.0

Typical thermal resistance junction-to-ambient

R_θ_JA

Operating junction and storage temperature range

T_J, T_STG

-50---+175

NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above T_A=25 per Fig. 2

(2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm²) per Fig. 5

www.galaxycn.com

(3) Measured of 8.3ms single half sine-w ave or equare w ave, duty cycle=4 pulses per minute maximum

(4) V_F=3.5 Volt max. for devices of V_(BR)200V, and V_F=5.0 Volt max. for devices of V_(BR)>200V

BLGALAXY ELECTRICAL

Document Number 0285011

12 3 4

中文翻译

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与DB105相关器件

型号	品牌	获取价格	描述	数据表
DB105/DF06	KINGTRONICS	获取价格	BRIDGE RECTIFIER
DB105/DF06	CZSTARSEA	获取价格	DB
DB105A	JINANJINGHENG	获取价格	Bilateral Voltage triggered Switch
DB105A	SHUNYE	获取价格	Bilateral Voltage triggered Switch Breakover Voltage:95-330Volts
DB105-BP	MCC	获取价格	Bridge Rectifier Diode, 1 Phase, 1A, 600V V(RRM), Silicon, PLASTIC, DB-1, 4 PIN
DB105-BP-HF	MCC	获取价格	Bridge Rectifier Diode, 1A, 600V V(RRM),
DB105G	KINGTRONICS	获取价格	BRIDGE RECTIFIER
DB105G	AMERICASEMI	获取价格	BRIDGE RECTIFIERS
DB105G	TSC	获取价格	Single Phase 1.0 AMP. Glass Passivated Bridge Rectifiers
DB105G	ZOWIE	获取价格	GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

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