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D45C8-L99Z PDF预览

D45C8-L99Z

更新时间: 2024-10-31 20:58:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
3页 325K
描述
Transistor

D45C8-L99Z 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.92最大集电极电流 (IC):4 A
配置:Single最小直流电流增益 (hFE):20
JESD-609代码:e0最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):40 W
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)标称过渡频率 (fT):32 MHz
Base Number Matches:1

D45C8-L99Z 数据手册

 浏览型号D45C8-L99Z的Datasheet PDF文件第2页浏览型号D45C8-L99Z的Datasheet PDF文件第3页 
March 2008  
D45C8  
PNP Power Amplifier  
Sourced from process 5P.  
TO-220  
1. Base 2. Collector 3. Emitter  
1
Absolute Maximum Ratings Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
-60  
Units  
V
Collector-Emitter Voltage  
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
V
A
CEO  
I
-4.0  
C
T , T  
-55 to +150  
°C  
J
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
V
Collector-Emitter Breakdown Voltage  
Collector-Emitter-(Base)Short  
Collector-Emitter-(Base)Open  
Emitter-Base Current  
I
= -100mA, I = 0  
-60  
V
(BR)CEO  
CES  
C
B
I
I
I
V
V
V
= -70V, I = 0  
-10  
mA  
mA  
mA  
CE  
CE  
EB  
E
= -55V, I = 0  
E
-100  
-100  
CEO  
= -5.0V, I = 0  
B
EBO  
On Characteristics *  
h
DC Current Gain  
V
V
= -1V, I = -0.2A  
40  
20  
120  
FE  
CE  
CE  
C
= -1V, I = -2.0A  
C
V
V
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
I
I
= -1.0A,I = -50mA  
-0.5  
-1.3  
V
V
CE (sat)  
C
C
B
= -1.0A,I = -100mA  
BE (sat)  
B
Small Signal Characteristics  
C
f
Output Capacitance  
V
I
= - 10V,f = 1.0MHz  
CB  
125  
pF  
pF  
ob  
Current Gain Bandwidth Product  
= -20mA, V = -4.0V  
32  
T
C
CE  
Thermal Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Max.  
Units  
P
Total Device Dissipation  
60  
W
D
Derate above 25°C  
480  
mW/°C  
R
R
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
2.1  
°C/W  
°C/W  
qJC  
62.5  
qJA  
© 2007 Fairchild Semiconductor Corporation  
D45C8 Rev. 1.0.0  
www.fairchildsemi.com  
1

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