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D45CBA PDF预览

D45CBA

更新时间: 2024-11-27 09:47:59
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
59页 336K
描述
4A, 80V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

D45CBA 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:PLASTIC, TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.71
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

D45CBA 数据手册

 浏览型号D45CBA的Datasheet PDF文件第2页浏览型号D45CBA的Datasheet PDF文件第3页浏览型号D45CBA的Datasheet PDF文件第4页浏览型号D45CBA的Datasheet PDF文件第5页浏览型号D45CBA的Datasheet PDF文件第6页浏览型号D45CBA的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
4.0 AMPERE  
COMPLEMENTARY  
SILICON  
. . . for general purpose driver or medium power output stages in CW or switching  
applications.  
POWER TRANSISTORS  
80 VOLTS  
Low Collector–Emitter Saturation Voltage — 0.5 V (Max)  
High f for Good Frequency Response  
t
Low Leakage Current  
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter Base Voltage  
V
CEO  
VCES  
90  
V
EB  
5.0  
Collector Current — Continuous  
Peak (1)  
I
C
4.0  
6.0  
Total Power Dissipation @ T = 25 C  
P
D
30  
1.67  
Watts  
W/ C  
C
Total Power Dissipation @ T = 25 C  
A
Operating and Storage Junction Temperature Range  
T , T  
55 to 150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
4.2  
75  
Unit  
C/W  
C/W  
C
Thermal Resistance, Junction to Case  
R
R
θJC  
Thermal Resistance, Junction to Ambient  
Maximum Lead Temperature for Soldering Purposes: 1/8from Case for 5 Seconds  
θJA  
T
L
275  
(1) Pulse Width  
6.0 ms, Duty Cycle  
50%.  
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
J
Characteristic  
Symbol  
Min  
Max  
Unit  
DC Current Gain  
h
FE  
(V  
CE  
(V  
CE  
(V  
CE  
= 1.0 Vdc, I = 0.2 Adc)  
C
40  
20  
20  
120  
= 1.0 Vdc, I = 1.0 Adc)  
C
C
= 1.0 Vdc, I = 2.0 Adc)  
(REPLACES D44C)  
3–415  
Motorola Bipolar Power Transistor Device Data  

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