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D45C8 PDF预览

D45C8

更新时间: 2024-11-28 03:28:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器功率放大器
页数 文件大小 规格书
3页 411K
描述
PNP Power Amplifier

D45C8 数据手册

 浏览型号D45C8的Datasheet PDF文件第2页浏览型号D45C8的Datasheet PDF文件第3页 
April 2005  
D45C8  
PNP Power Amplifier  
Sourced from process 5P.  
TO-220  
1. Base 2. Collector 3. Emitter  
1
Absolute Maximum Ratings Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
-60  
Units  
VCEO  
Collector-Emitter Voltage  
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
V
IC  
-4.0  
A
TJ, TSTG  
-55 to +150  
°C  
Electrical Characteristics Ta=25°C unless otherwise noted  
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
V(BR)CEO  
ICES  
Collector-Emitter Breakdown Voltage  
Collector-Cutoff Current  
IC = -100mA, IB = 0  
-60  
V
VCB = -70V, IE = 0  
VEB = -5.0V, IB = 0  
-10  
µA  
µA  
IEBO  
Emitter-Cutoff Current  
-100  
On Characteristics *  
hFE  
DC Current Gain  
VCE = -1V, IC = -0.2A  
40  
20  
120  
V
CE = -1V, IC = -2.0A  
VCE (sat)  
VBE (sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
IC = -1.0A,IB = -50mA  
IC = -1.0A,IB = -100mA  
-0.5  
-1.3  
V
V
Small Signal Characteristics  
fT Current Gain Bandwidth Product  
IC = -20mA, VCE = -4.0V  
32  
pF  
Thermal Characteristics Ta=25°C unless otherwise noted  
Symbol Parameter  
Max.  
Units  
PD  
Total Device Dissipation  
60  
W
Derate above 25°C  
480  
mW/°C  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
2.1  
°C/W  
°C/W  
62.5  
©2005 Fairchild Semiconductor Corporation  
D45C8 Rev. A  
1
www.fairchildsemi.com  

D45C8 替代型号

型号 品牌 替代类型 描述 数据表
D45C8 ONSEMI

类似代替

PNP功率放大器
TIP32AG ONSEMI

功能相似

Complementary Silicon Plastic Power Transistors
NTE378 NTE

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Silicon Complementary Transistors Power Amp Driver, Output, Switch

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