Datasheet > D45C8_10

D45C8_10

更新时间： 2024-11-28 12:51:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器功率放大器
页数	文件大小	规格书
3页	144K
描述
PNP Power Amplifier

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D45C8_10 数据手册

January 2010

D45C8

PNP Power Amplifier

• Sourced from process 5P.

TO-220

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_CEO

Parameter

Value

-60

Units

Collector-Emitter Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

I_C

-4.0

T_J, T_STG

-55 to +150

°C

Electrical Characteristics T_A=25°C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

Typ.

Max. Units

Off Characteristics

V_(BR)CEO

I_CES

Collector-Emitter Breakdown Voltage I_C= -100mA, I_B= 0

-60

Collector-Emitter-(Base)Short

Collector-Emitter-(Base)Open

Emitter-Base Current

V_CE= -70V, I_E= 0

V_CE= -55V, I_E= 0

V_EB= -5.0V, I_B= 0

-10

μA

I_CEO

-100

I_EBO

On Characteristics

V_CE= -1.0V, I_C= -0.2A

V_CE= -1.0V, I_C= -2.0A

120

h_FE

DC Current Gain

V_{CE (sat)}

V_{BE (sat)}

Small Signal Characteristics

Collector-Emitter Saturation Voltage I_C= -1.0A, I_B= -50mA

-0.5

-1.3

Base-Emitter Saturation Voltage

I_C= -1.0A, I_B= -100mA

C_ob

f_T

Output Capacitance

V_CB= -10V, f = 1.0MHz

I_C= -20mA, V_CE= -4.0V

125

Current Gain Bandwidth Product

MHz

t_d, Delay Time

t_r, Rise Time

502

t_ON

I_C= -1.0A,

I_B1= I_B2= -0.1A

V_CC= -30V, tp = 25μs

t_s, Storage Time

t_f, Fall Time

474

t_OFF

Thermal Characteristics T_A=25°C unless otherwise noted

Symbol

Parameter

Max.

Units

P_D

Total Device Dissipation

Derate above 25°C

480

mW/°C

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

2.1

°C/W

62.5

D45C8 Rev. B2

www.fairchildsemi.com

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