Datasheet > D2011UK

D2011UK

更新时间： 2023-12-06 20:11:48

品牌	Logo	应用领域
TTELEC		放大器晶体管
页数	文件大小	规格书
2页	25K
描述
OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

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数据手册

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D2011UK 数据手册

TetraFET

D2011UK

ROHS COMPLIANT METAL GATE RF SILICON FET

MECHANICAL DATA

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

10W – 28V – 1GHz

SINGLE ENDED

FEATURES

DBC1 Package

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

PIN 1 Source

PIN 2 Drain

PIN 3 Drain

PIN 4 Source

PIN 5 Source

PIN 6 Gate

PIN 7 Gate

• LOW C

rss

PIN 8 Source

• LOW NOISE

• HIGH GAIN

DIM

6.47

0.76

45°

Tol.

Inches

.255

.030

45°

Tol.

.003

5°

0.08

5°

0.76

1.14

2.67

11.73

8.43

7.92

0.20

0.64

0.30

3.25

2.11

6.35SQ

1.65

0.13

0.08

0.13

0.08

0.02

0.08

0.51

max

.030

.045

.105

.462

.332

.312

.008

.025

.012

.128

.083

.250SQ

.065

.005

.003

.005

.003

.001

.003

.020

max

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 2 GHz

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

case

Power Dissipation

70W

65V

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

DSS

GSS

±20V

D(sat)

Storage Temperature

–65 to 150°C

200°C

stg

Maximum Operating Junction Temperature

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Document Number 2543

Issue 1

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