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CYT4033DBK PDF预览

CYT4033DBK

更新时间: 2024-11-20 20:43:03
品牌 Logo 应用领域
CENTRAL 光电二极管晶体管
页数 文件大小 规格书
2页 540K
描述
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, ROHS COMPLIANT, PLASTIC PACKAGE-8

CYT4033DBK 技术参数

生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.74最大集电极电流 (IC):1 A
集电极-发射极最大电压:80 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):25JESD-30 代码:R-PDSO-G8
JESD-609代码:e3元件数量:2
端子数量:8最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

CYT4033DBK 数据手册

 浏览型号CYT4033DBK的Datasheet PDF文件第2页 
CYT4033D  
www.centralsemi.com  
SURFACE MOUNT  
DUAL, ISOLATED  
PNP SILICON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CYT4033D type  
consists of two (2) isolated PNP silicon transistors  
packaged in an epoxy molded SOT-228 surface mount  
case. This SUPERmini™ device is manufactured by  
the epitaxial planar process.  
MARKING: FULL PART NUMBER  
SOT-228 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
A
Collector-Base Voltage  
V
V
V
80  
80  
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
5.0  
V
Continuous Collector Current  
Peak Collector Current  
I
1.0  
A
C
I
1.5  
A
CM  
Power Dissipation  
P
2.0  
W
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T
T
-65 to +150  
62.5  
°C  
°C/W  
J, stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
50  
UNITS  
I
I
V
V
=60V  
nA  
nA  
V
CBO  
EBO  
CB  
EB  
=5.0V  
10  
BV  
BV  
BV  
I =10µA  
80  
80  
CBO  
CEO  
C
I =10mA  
V
C
I =10µA  
5.0  
V
EBO  
E
V
V
V
V
I =150mA, I =15mA  
0.15  
0.50  
0.90  
1.10  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =500mA, I =50mA  
V
C
B
I =150mA, I =15mA  
V
C
B
I =500mA, I =50mA  
V
C
B
h
h
h
h
V
=5.0V, I =0.1mA  
75  
100  
70  
CE  
CE  
CE  
CE  
CE  
CB  
EB  
C
V
V
V
V
V
V
=5.0V, I =100mA  
300  
FE  
C
=5.0V, I =500mA  
FE  
C
=5.0V, I =1.0A  
25  
FE  
C
f
=10V, I =50mA, f=1.0MHz  
100  
MHz  
pF  
T
C
C
C
=10V, I =0, f=1.0MHz  
20  
ob  
ib  
E
=0.5V, I =0, f=1.0MHz  
110  
pF  
C
R1 (23-February 2010)  

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