Datasheet > CYRS1049DV33

CYRS1049DV33

更新时间： 2022-06-05 18:02:44

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		/
页数	文件大小	规格书
16页	1071K
描述
4-Mbit (512 K Ã 8) Static RAM

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数据手册

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CYRS1049DV33 数据手册

CYRS1049DV33

4-Mbit (512 K × 8) Static RAM

with RadStop™ Technology

4-Mbit (512

K × 8) Static RAM with RadStop™ Technology

Radiation Performance

Features

❥ Temperature ranges

Radiation Data

❥ Military/Space: –55 °C to 125 °C

❥ Total dose 300 Krad

❥ High speed

❥ t_AA= 12 ns

❥ Soft

error rate (both heavy ion and proton)

Heavy ions  1 × 10^-10upsets/bit-day with single-error

correction, double error detection error detection and

correction (SEC-DED EDAC)

❥ Low active power

❥ I_CC= 95 mA at 12 ns (P_MAX= 315 mW)

❥ Neutron = 2.0 × 10¹⁴N/cm²

❥ Low CMOS standby power

❥ I_SB2= 15 mA

❥ Dose rate > 2.0 × 10⁹(rad(Si)/s)

❥ Latch up immunity LET = 120 MeV.cm²/mg (125 C)

❥ 2.0 V data retention

❥ Automatic power-down when deselected

❥ Transistor-transistor logic (TTL) compatible inputs and outputs

❥ Easy memory expansion with CE and OE features

❥ Available in Pb-free 36-pin ceramic flat package

Processing Flows

❥ V grade - Class V flow in compliance with MIL-PRF 38535

Prototyping Options

❥ Non qualified manufacturers list (QML)

grade

CYPT1049DV33 devices with same functional and timing

characteristics in a 36-pin ceramic flat package

Logic Block Diagram

I/O

INPUT BUFFER

I/O

1 1

I/O

512K x 8

ARRAY

IIO/O

I/O

POWER

DOWN

I/O

COLUMN DECODER

Cypress Semiconductor Corporation

Document Number: 001-64292 Rev. *C

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised March 19, 2012

12 3 4 5 6 7...16

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