Datasheet > CYRS1061G30-10GGMB

CYRS1061G30-10GGMB

更新时间： 2023-12-06 20:13:21

品牌	Logo	应用领域
英飞凌 - INFINEON		静态存储器
页数	文件大小	规格书
16页	325K
描述
Asynchronous SRAM

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CYRS1061G30-10GGMB 数据手册

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CYRS1061G

16-Mb (1 M × 16) Static RAM

with ECC and RadStop™ Technology

CYRS1061G, 16-Mb (1

M × 16) Static RAM with ECC and RadStop™ Technology

Radiation Performance

Features

■ Temperature ranges

Radiation Data

❐ Military/Space: –55°C to 125°C

■ Total dose =200 krad

■ High speed

❐ t_AA= 10 ns

■ Embedded ECC for single-bit error correction^{[1, 2]}

■ Soft error rate (both heavy ion and proton)

Heavy ions  1  10^-10upsets/bit-day

■ Neutron = 1.5  10¹¹N/cm²

■ Low active power

❐ I_CC= 90 mA at 10 ns (typical)

■ Low CMOS standby power

❐ I_SB2= 20 mA (typical)

■ Dose rates:

❐  3.0  10⁸(rad(Si)/s) (R/W)

■ 1.0 V data retention

❐  2.0  10⁹(rad(Si)/s) (static)

■ Automatic power-down when deselected

■ Dose rate latch-up survivability  5.0 × 10¹⁰(rad(Si)/s) (125C)

■ Latch-up immunity >60 MeV.cm²/mg (95C)

■ TTL-compatible inputs and outputs

■ Easy memory expansion with CE and OE features

Processing Flows

■ Available in Gold plated lead 54-lead ceramic TSOP package

■ V Grade - Class V flow in compliance with MIL-PRF 38535

For a complete list of related documentation, click here.

Prototyping Options

■ CYPT1061G prototype units with the same functional and

timing as flight units using non-radiation hardened die in a

54-lead ceramic TSOP package

Logic Block Diagram

ECC ENCODER

INPUT BUFFER

I/O₀‐I/O₇

I/O ₈‐I/O₁₅

M EM ORY

ARRAY

COLUM N DECODER

BHE

W E

BLE

Cypress Semiconductor Corporation

Document Number: 002-27271 Rev. *A

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised January 10, 2020

12 3 4 5 6 7...16

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