Datasheet > CYRS15B102Q-GGMB

CYRS15B102Q-GGMB

更新时间： 2024-11-22 14:56:27

品牌	Logo	应用领域
英飞凌 - INFINEON		存储
页数	文件大小	规格书
31页	665K
描述
铁电存储器 (F-RAM)

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中文翻译

获取价格

数据手册

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CYRS15B102Q-GGMB 数据手册

CYRS15B102Q

Radiation hardened, 2-Mbit Serial (SPI)

F-RAM

Radiation performance

• Radiation data

- Total dose =150 Krad (50 rad(Si)/s)

200 Krad (10 rad(Si)/s)

- Heavy Ion soft error rate immune up to 114LET

- Heavy Ion single event functional interrupt < 1.34 × 10^-4upsets/device-day (GEO - solar min)

- Dose rate = 1.1 × 10⁸rad(Si)/sec (dynamic)/1.1× 10¹¹rad(Si)/sec (static)

- Dose rate survivability (rad(Si)/sec) = 1.1 × 10¹¹rad(Si)/sec

- Latch-up immunity = 114 MeV.cm²/mg (115 °C)

• Prototyping options

- Non-qualified CYPT15B102Q devices with same functional and timing characteristics in a 16-pin ceramic SOP

package

Features

• 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8

- High-endurance 10 trillion (10¹³) read/writes

- 121-year data retention at 85 °C(See Data retention and endurance on page 22)

- NoDelay™ writes

• Fast serial peripheral interface (SPI)

- Up to 25-MHz frequency

- Direct hardware replacement for serial flash and EEPROM

• Sophisticated write protection scheme

- Hardware protection using the write protect (WP) pin

- Software protection using write disable instruction

- Software block protection for 1/4, 1/2, or entire array

• Device ID

- Manufacturer ID and product ID

• Low power consumption (pre-/post 150krad TID radiation)

- 10-mA/10-mA active current at 25 MHz

- 850-A/5-mA standby current

- 25-A/8mA sleep mode current

• Low-voltage operation: V_DD= 2.0 V to 3.6 V

• Military temperature: –55 °C to +125 °C

• 16-pin ceramic SOP package

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

page 1 of 31

002-19045 Rev. *E

2021-12-10

12 3 4 5 6 7...31

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