CYBT-223058-02, CYBT-253059-02
AIROC™ Bluetooth® & Bluetooth® LE module
General description
The CYBT-2x305x-02 is a dual-mode Bluetooth® BR/EDR and Low Energy wireless module solution. The
CYBT-223058-02 includes an onboard crystal oscillator, passive components, and the Infineon CYW20819 silicon
device. The CYBT-253059-02 includes an onboard crystal oscillator, passive components, and the Infineon
CYW20820 silicon device.
The CYBT-2x305x-02 supports a number of peripheral functions (ADC, PWM), as well as multiple serial
communication protocols (UART, SPI, I2C, I2S/PCM). The CYBT-2x305x-02 includes a royalty-free stack
compatible with Bluetooth® 5.0 in a small 11.0 ×11.00 × 1.70 mm module form-factor.
The CYBT-2x305x-02 includes 256 KB of on-chip flash memory and is designed for standalone operation. The
CYBT-2x305x-02 uses an integrated power amplifier to achieve Class I or Class II output power capability.
The CYBT-2x305x-02 includes an integrated chip antenna, is qualified by Bluetooth® SIG, and includes regulatory
certification approval for FCC, ISED, MIC, and CE.
Features
• Module description
- Module size: 11.00 mm × 11.00 mm × 1.70 mm
- Complies with Bluetooth® Core Specification version 5.0 and includes support for BR, EDR 2/3 Mbps, eSCO,
Bluetooth LE, LE 2 Mbps, as well as Bluetooth® Mesh.
• QDID: 158813
• Declaration ID: D052875
- Certified to FCC, ISED, MIC, and CE standards
- 256-KB on-chip Flash, 176-KB on-chip RAM
- Industrial temperature range: –30°C to +85°C
- Integrated Arm® Cortex®-M4 microprocessor core with floating point unit (FPU)
• RF characteristics
- Maximum TX output power: +4.0 dBm (CYBT-223058-02); +10.5 dBm (CYBT-253059-02)
- Bluetooth® LE RX Receive Sensitivity: –94.5 dBm
• Power consumption
- TX current consumption
• Bluetooth® LE silicon: 5.8 mA (radio only, 4 dBm) (CYBT-223058-02); 22 mA (radio only, 10.5 dBm)
(CYBT-253059-02)
- RX current consumption
• Bluetooth® silicon: 5.9 mA (radio only)
- Infineon CYW20819/20 silicon low power mode support
• PDS: 16.5 µA with 176 KB RAM retention
• ePDS: 8.7 µA
• HIDOFF (wake on external or timed interrupt): 1.75 µA
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
page 1
002-29172 Rev. *C
2023-06-08