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CY7C4275V-15ASI PDF预览

CY7C4275V-15ASI

更新时间: 2024-01-10 06:44:52
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 时钟先进先出芯片内存集成电路
页数 文件大小 规格书
19页 364K
描述
FIFO, 32KX18, 10ns, Synchronous, CMOS, PQFP64, 10 X 10 MM, 1.40 MM HEIGHT, PLASTIC, STQFP-64

CY7C4275V-15ASI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFP包装说明:10 X 10 MM, 1.40 MM HEIGHT, PLASTIC, STQFP-64
针数:64Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.43Is Samacsys:N
最长访问时间:10 ns其他特性:RETRANSMIT
最大时钟频率 (fCLK):66 MHz周期时间:15 ns
JESD-30 代码:S-PQFP-G64JESD-609代码:e0
长度:10 mm内存密度:589824 bit
内存集成电路类型:OTHER FIFO内存宽度:18
功能数量:1端子数量:64
字数:32768 words字数代码:32000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX18
输出特性:3-STATE可输出:YES
封装主体材料:PLASTIC/EPOXY封装代码:LFQFP
封装等效代码:QFP64,.47SQ,20封装形状:SQUARE
封装形式:FLATPACK, LOW PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
认证状态:Not Qualified座面最大高度:1.6 mm
最大待机电流:0.004 A子类别:FIFOs
最大压摆率:0.035 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10 mmBase Number Matches:1

CY7C4275V-15ASI 数据手册

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fax id: 5422  
CY7C4255V/CY7C4265V  
CY7C4275V/CY7C4285V  
PRELIMINARY  
8K/16K/32K/64Kx18 Low Voltage Deep Sync FIFOs  
Features  
Functional Description  
The CY7C4255/65/75/85V are high-speed, low-power, first-in  
first-out (FIFO) memories with clocked read and write interfac-  
es. All are 18 bits wide and are pin/functionally compatible to  
• 3.3V operation for low power consumption and easy  
integration into low-voltage systems  
• High-speed, low-power, first-in first-out (FIFO)  
memories  
• 8K x 18 (CY7C4255V)  
• 16K x 18 (CY7C4265V)  
the  
CY7C42X5V Synchronous FIFO  
family. The  
CY7C4255/65/75/85V can be cascaded to increase FIFO  
depth. Programmable features include Almost Full/Almost  
Empty flags. These FIFOs provide solutions for a wide variety of  
data buffering needs, including high-speed data acquisition, multipro-  
cessor interfaces, and communications buffering.  
• 32K x 18 (CY7C4275V)  
• 64K x 18 (CY7C4285V)  
• 0.35 micron CMOS for optimum speed/power  
• High-speed 67-MHz operation (15 ns read/write cycle  
times)  
These FIFOs have 18-bit input and output ports that are con-  
trolled by separate clock and enable signals. The input port is  
controlled by a free-running clock (WCLK) and a write enable  
pin (WEN).  
• Low power  
When WEN is asserted, data is written into the FIFO on the rising  
edge of the WCLK signal. While WEN is held active, data is continu-  
ally written into the FIFO on each cycle. The output port is controlled  
in a similar manner by a free-running read clock (RCLK) and a read  
enable pin (REN). In addition, the CY7C4255/65/75/85V have an  
output enable pin (OE). The read and write clocksmay be tied togeth-  
er for single-clock operation or the two clocks may be run indepen-  
dently for asynchronous read/write applications. Clock frequencies  
up to 67 MHz are achievable.  
I
I
= 30 mA  
= 3 mA  
CC  
SB  
• Fully asynchronous and simultaneous read and write  
operation  
• Empty, Full, Half Full, and programmable Almost Empty  
and Almost Full status flags  
• Retransmit function  
• Output Enable (OE pin  
)
Retransmit and Synchronous Almost Full/Almost Empty flag  
features are available on these devices.  
• Independent read and write enable pins  
• Supports free-running 50% duty cycle clock inputs  
• Width Expansion Capability  
• Depth Expansion Capability  
• 68-pin PLCC and 64-pin 10x10 STQFP  
• Pin-compatible density upgrade to  
CY7C42X5V-JC/ASC families  
• Pin-compatible 3.3V solutions for CY7C4255/65/75/85  
Depth expansion is possible using the cascade input (WXI,  
RXI), cascade output (WXO, RXO), and First Load (FL) pins. The  
WXO and RXO pins are connected to the WXI and RXI pins of the  
next device, and the WXO and RXO pins of the last device should be  
connected to the WXI and RXI pins of the first device. The FL pin of  
the first device is tied to V and the FL pin of all the remaining devic-  
SS  
.
es should be tied to V  
CC  
D
0 – 17  
Logic Block Diagram  
INPUT  
REGISTER  
WCLK  
WEN  
FLAG  
PROGRAM  
REGISTER  
WRITE  
CONTROL  
High  
FF  
EF  
Density  
Dual-Port  
RAM Array  
FLAG  
LOGIC  
PAE  
PAF  
8Kx9  
16Kx9  
32Kx9  
64Kx9  
SMODE  
WRITE  
POINTER  
READ  
POINTER  
RS  
RESET  
LOGIC  
FL/RT  
THREE–STATE  
OUTPUTREGISTER  
READ  
CONTROL  
WXI  
WXO/HF  
RXI  
EXPANSION  
LOGIC  
OE  
Q
0 – 17  
RXO  
4275V–1  
RCLK  
REN  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
November 6, 1997 - Revised February 26, 1998  

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