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CY7C1461AV33-100BZC PDF预览

CY7C1461AV33-100BZC

更新时间： 2024-09-28 05:09:35
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器时钟
页数 文件大小 规格书
31页 1144K
描述
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL⑩ Architecture

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CY7C1461AV33-100BZC 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：BGA包装说明：15 X 17 MM, 1.40 MM HEIGHT, FBGA-165
针数：165Reach Compliance Code：compliant
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
风险等级：5.87最长访问时间：8.5 ns
其他特性：FLOW-THROUGH ARCHITECTURE最大时钟频率 (fCLK)：100 MHz
I/O 类型：COMMONJESD-30 代码：R-PBGA-B165
JESD-609代码：e0长度：17 mm
内存密度：37748736 bit内存集成电路类型：ZBT SRAM
内存宽度：36湿度敏感等级：3
功能数量：1端子数量：165
字数：1048576 words字数代码：1000000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：1MX36
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：LBGA封装等效代码：BGA165,11X15,40
封装形状：RECTANGULAR封装形式：GRID ARRAY, LOW PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：220
电源：2.5/3.3,3.3 V认证状态：Not Qualified
座面最大高度：1.4 mm最大待机电流：0.12 A
最小待机电流：3.14 V子类别：SRAMs
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3.135 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：BALL
端子节距：1 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：15 mm
Base Number Matches：1

CY7C1461AV33-100BZC 数据手册

 浏览型号CY7C1461AV33-100BZC的Datasheet PDF文件第2页浏览型号CY7C1461AV33-100BZC的Datasheet PDF文件第3页浏览型号CY7C1461AV33-100BZC的Datasheet PDF文件第4页浏览型号CY7C1461AV33-100BZC的Datasheet PDF文件第5页浏览型号CY7C1461AV33-100BZC的Datasheet PDF文件第6页浏览型号CY7C1461AV33-100BZC的Datasheet PDF文件第7页 
CY7C1461AV33  
CY7C1463AV33  
CY7C1465AV33  
36-Mbit (1M x 36/2 M x 18/512K x 72)  
Flow-ThroughSRAMwithNoBL™Architecture  
Features  
Functional Description[1]  
• No Bus Latency™ (NoBL™) architecture eliminates dead  
cycles between write and read cycles  
The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is a  
3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow -through  
Burst SRAM designed specifically to support unlimited true  
back-to-back Read/Write operations without the insertion of  
wait states. The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33  
is equipped with the advanced No Bus Latency (NoBL) logic  
required to enable consecutive Read/Write operations with  
data being transferred on every clock cycle. This feature  
dramatically improves the throughput of data through the  
SRAM, especially in systems that require frequent Write-Read  
transitions.  
• Supports up to 133-MHz bus operations with zero wait  
states  
— Data is transferred on every clock  
• Pin-compatible and functionally equivalent to ZBT™  
devices  
• Internally self timed output buffer control to eliminate the  
need to use OE  
• Registered inputs for flow through operation  
• Byte Write capability  
All synchronous inputs pass through input registers controlled  
by the rising edge of the clock. The clock input is qualified by  
the Clock Enable (CEN) signal, which when deasserted  
suspends operation and extends the previous clock cycle.  
Maximum access delay from the clock rise is 6.5 ns (133-MHz  
device).  
• 3.3V/2.5V IO power supply  
• Fast clock-to-output times  
— 6.5 ns (for 133-MHz device)  
Write operations are controlled by the two or four Byte Write  
Select (BWX) and a Write Enable (WE) input. All writes are  
conducted with on-chip synchronous self timed write circuitry.  
• Clock Enable (CEN) pin to enable clock and suspend  
operation  
• Synchronous self timed writes  
• Asynchronous Output Enable  
Three synchronous Chip Enables (CE1, CE2, CE3) and an  
asynchronous Output Enable (OE) provide for easy bank  
selection and output tri-state control. To avoid bus contention,  
the output drivers are synchronously tri-stated during the data  
portion of a write sequence.  
• CY7C1461AV33, CY7C1463AV33 available in  
JEDEC-standard Pb-free 100-pin TQFP package, Pb-free  
and non-Pb-free 165-Ball FBGA package. CY7C1465AV33  
available in Pb-free and non-Pb-free 209-Ball FBGA  
package  
• Three chip enables for simple depth expansion  
• Automatic Power down feature available using ZZ mode or  
CE deselect  
• IEEE 1149.1 JTAG-Compatible Boundary Scan  
• Burst Capability — linear or interleaved burst order  
• Low standby power  
Selection Guide  
133 MHz  
6.5  
100 MHz  
8.5  
Unit  
ns  
Maximum Access Time  
Maximum Operating Current  
Maximum CMOS Standby Current  
310  
290  
mA  
mA  
120  
120  
Note:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05356 Rev. *F  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised July 09, 2007  
1234567...31

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