Datasheet > CY7C1446V33-167BZC

CY7C1446V33-167BZC

更新时间： 2024-12-02 07:20:31

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
31页	641K
描述
Cache SRAM, 512KX72, 3.5ns, CMOS, PBGA165, 15 X 17 MM, 1.20 MM HEIGHT, FBGA-165

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CY7C1440V33

CY7C1442V33

CY7C1446V33

PRELIMINARY

1M x 36/2M x 18/512K x 72

Pipelined SRAM

Chip Enable (CE), burst control inputs (ADSC, ADSP, and

ADV), write enables (BWa, BWb, BWc, BWd, and BWE), and

Global Write (GW).

Features

• Fast clock speed: 250, 200, and 167 MHz

• Provide high-performance 3-1-1-1 access rate

• Fast access time: 2.7, 3.0 and 3.5 ns

• Optimal for depth expansion

• Single 3.3V –5% and +5% power supply V_DD

• Separate V_DDQfor 3.3V or 2.5V

• Common data inputs and data outputs

• Byte Write Enable and Global Write control

• Chip enable for address pipeline

Asynchronous inputs include the Output Enable (OE) and

burst mode control (MODE). The data (DQ_a,b,c,d) and the data

parity (DP_a,b,c,d

)

outputs, enabled by OE, are also

asynchronous.

DQ_a,b,c,dand DP_a,b,c,dapply to CY7C1440V33, DQ_a,band

DP_a,bapply to CY7C1442V33, and DQ_{a,b,c,d,e,f,g,h}and

DP_{a,b,c,d,e,f,g,h}apply to CY7C1446V33. a,b,c,d,e,f,g,h each

are eight bits wide in the case of DQ and one bit wide in the

case of DP.

• Address, data, and control registers

• Internally self-timed Write Cycle

• Burst control pins (interleaved or linear burst

sequence)

• Automatic power-down for portable applications

• High-density, high-speed packages

• JTAG boundary scan for BGA packaging version

Addresses and chip enables are registered with either

Address Status Processor (ADSP) or Address Status

Controller (ADSC) input pins. Subsequent burst addresses

can be internally generated as controlled by the Burst Advance

Pin (ADV).

Address, data inputs, and write controls are registered on-chip

to initiate self-timed WRITE cycle. WRITE cycles can be one

to eight bytes wide as controlled by the write control inputs.

Individual byte write allows individual byte to be written. BWa

• Available in 119-ball bump BG,165-ball FBGA package,

and 100-pin TQFP packages (CY7C1440V33 and

CY7C1442V33). 209 FBGA package for CY7C1446V33.

controls DQa and DPa. BWb controls DQ and DP . BWc

controls DQc and DPd. BWd controls DQ and DPd. BWe

controls DQe and DPe. BWf controls DQf and DPf. BWg

controls DQg and DPg. BWh controls DQh and DPh. BWa,

BWb, BWc, BWd, BWe, BWf, BWg, and BWh can be active

only with BWE LOW. GW LOW causes all bytes to be written.

Write pass-through capability allows written data available at

the output for the immediately next Read cycle. This device

also incorporates pipelined enable circuit for easy depth

expansion without penalizing system performance.

Functional Description

The Cypress Synchronous Burst SRAM family employs

high-speed, low-power CMOS designs using advanced

single-layer polysilicon, triple-layer metal technology. Each

memory cell consists of six transistors.

The CY7C1440V33, CY7C1442V33, and CY7C1446V33

SRAMs integrate 1,048,576 x 36/2,097,152 x 18 and 524,288

x 72 SRAM cells with advanced synchronous peripheral

circuitry and a two-bit counter for internal burst operation. All

synchronous inputs are gated by registers controlled by a

positive-edge-triggered Clock Input (CLK). The synchronous

inputs include all addresses, all data inputs, address-pipelining

All inputs and outputs of the CY7C1440V33, CY7C1442V33,

and the CY7C1446V33 are JEDEC-standard JESD8-5

-compatible.

Selection Guide^[1]

CY7C1440V33

CY7C1446V33

-300

CY7C1440V33

CY7C1446V33

-250

CY7C1440V33

CY7C1446V33

-200

CY7C1440V33

CY7C1446V33

-167

Unit

Maximum Access Time

2.3

2.7

3.0

3.5

Maximum Operating Current

Com’l

TBD

Maximum CMOS Standby Current

Note:

1. Shaded areas contain advance information.

Cypress Semiconductor Corporation

Document #: 38-05184 Rev. *B

•

3901 North First Street

•

San Jose, CA 95134

•

408-943-2600

Revised November 13, 2002

12 3 4 5 6 7...31

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与CY7C1446V33-167BZC相关器件

型号	品牌	获取价格	描述	数据表
CY7C1446V33-200AC	CYPRESS	获取价格	Cache SRAM, 512KX72, 3ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
CY7C1446V33-200BGC	CYPRESS	获取价格	Cache SRAM, 512KX72, 3ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
CY7C1446V33-200BX	CYPRESS	获取价格	Cache SRAM, 512KX72, 3ns, CMOS, PBGA209, 14 X 22 MM, 2.20 MM HEIGHT, PLASTIC, BGA-209
CY7C1446V33-200BZC	CYPRESS	获取价格	Cache SRAM, 512KX72, 3ns, CMOS, PBGA165, 15 X 17 MM, 1.20 MM HEIGHT, FBGA-165
CY7C1446V33-250AC	CYPRESS	获取价格	Cache SRAM, 512KX72, 2.7ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
CY7C1446V33-250BZC	CYPRESS	获取价格	Cache SRAM, 512KX72, 2.7ns, CMOS, PBGA165, 15 X 17 MM, 1.20 MM HEIGHT, FBGA-165
CY7C1446V33-300AC	CYPRESS	获取价格	Cache SRAM, 512KX72, 2.3ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
CY7C1447AV25	CYPRESS	获取价格	36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM
CY7C1447AV25-100BGC	CYPRESS	获取价格	36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM
CY7C1447AV25-100BGI	CYPRESS	获取价格	36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

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