Datasheet > CY7C1423KV18-300BZXCT

CY7C1423KV18-300BZXCT

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		双倍数据速率
页数	文件大小	规格书
31页	787K
描述
DDR-II SIO

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数据手册

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CY7C1423KV18-300BZXCT 数据手册

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CY7C1423KV18/CY7C1424KV18

36-Mbit DDR II SIO SRAM Two-Word

Burst Architecture

36-Mbit DDR II SIO SRAM Two-Word Burst Architecture

Features

Configurations

■ 36-Mbit density (2M × 18, 1M × 36)

CY7C1423KV18 – 2M × 18

CY7C1424KV18 – 1M × 36

■ 333 MHz clock for high bandwidth

■ Two-word burst for reducing address bus frequency

Functional Description

■ Double data rate (DDR) interfaces (data transferred at

666 MHz) at 333 MHz

The CY7C1423KV18, and CY7C1424KV18 are 1.8

synchronous pipelined SRAMs, equipped with DDR II SIO

(double data rate separate I/O) architecture. The DDR II SIO

consists of two separate ports: the read port and the write port to

access the memory array. The read port has data outputs to

support read operations and the write port has data inputs to

support write operations. The DDR II SIO has separate data

inputs and data outputs to completely eliminate the need to

“turnaround” the data bus required with common I/O devices.

Access to each port is accomplished through a common address

bus. Addresses for read and write are latched on alternate rising

edges of the input (K) clock. Write data is registered on the rising

edges of both K and K. Read data is driven on the rising edges

of C and C if provided, or on the rising edge of K and K if C/C are

not provided. Each address location is associated with two 18-bit

words in the case of CY7C1423KV18, and two 36-bit words in

the case of CY7C1424KV18 that burst sequentially into or out of

the device.

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Two input clocks for output data (C and C) to minimize clock

skew and flight time mismatches

■ Echo clocks (CQ and CQ) simplify data capture in high speed

systems

■ Synchronous internally self timed writes

■ DDR II operates with 1.5 cycle read latency when DOFF is

asserted HIGH

■ Operatessimilarto DDR Idevice with 1 cycle read latencywhen

DOFF is asserted LOW

■ 1.8 V core power supply with HSTL inputs and outputs

■ Variable drive HSTL output buffers

Asynchronous inputs include an output impedance matching

input (ZQ). Synchronous data outputs are tightly matched to the

two output echo clocks CQ/CQ, eliminating the need to capture

data separately from each individual DDR II SIO SRAM in the

system design. Output data clocks (C/C) enable maximum

system clocking and data synchronization flexibility.

■ Expanded HSTL output voltage (1.4 V to V_DD

)

❐ Supports both 1.5 V and 1.8 V IO supply

■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

■ Phase locked loop (PLL) for accurate data placement

For a complete list of related documentation, click here.

Selection Guide

Description

Maximum operating frequency

333 MHz

333

300 MHz

300

250 MHz Unit

250

430

490

MHz

Maximum operating current

× 18

× 36

490

460

600

Not Offered

Cypress Semiconductor Corporation

Document Number: 001-57829 Rev. *J

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised January 4, 2018

12 3 4 5 6 7...31

中文翻译

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与CY7C1423KV18-300BZXCT相关器件

型号	品牌	获取价格	描述	数据表
CY7C1423KV18-333BZXC	INFINEON	获取价格	DDR-II SIO
CY7C142-45DC	CYPRESS	获取价格	Multi-Port SRAM, 2KX8, 45ns, CMOS, CDIP48, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-48
CY7C142-45DI	ETC	获取价格	x8 Dual-Port SRAM
CY7C142-45DMB	CYPRESS	获取价格	2Kx8 Dual-Port Static RAM
CY7C142-45FMB	ETC	获取价格	x8 Dual-Port SRAM
CY7C142-45LC	CYPRESS	获取价格	Multi-Port SRAM, 2KX8, 45ns, CMOS, CQCC48, CERAMIC, LCC-48
CY7C142-45LMB	ETC	获取价格	x8 Dual-Port SRAM
CY7C142-45PC	CYPRESS	获取价格	2Kx8 Dual-Port Static RAM
CY7C142-45PI	CYPRESS	获取价格	2Kx8 Dual-Port Static RAM
CY7C1424AV18	CYPRESS	获取价格	36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture

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