Datasheet > CY7C1410AV18-300BZI

CY7C1410AV18-300BZI

更新时间： 2024-11-24 14:37:47

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		时钟静态存储器内存集成电路
页数	文件大小	规格书
25页	267K
描述
QDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, FBGA-165

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

CY7C1410AV18-300BZI 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	15 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, FBGA-165	针数：	165
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.92
Is Samacsys：	N	最长访问时间：	0.45 ns
其他特性：	PIPELINED ARCHITECTURE	最大时钟频率 (fCLK)：	300 MHz
I/O 类型：	SEPARATE	JESD-30 代码：	R-PBGA-B165
JESD-609代码：	e0	长度：	17 mm
内存密度：	33554432 bit	内存集成电路类型：	QDR SRAM
内存宽度：	8	湿度敏感等级：	3
功能数量：	1	端子数量：	165
字数：	4194304 words	字数代码：	4000000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	4MX8
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	LBGA	封装等效代码：	BGA165,11X15,40
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	220
电源：	1.5/1.8,1.8 V	认证状态：	Not Qualified
座面最大高度：	1.4 mm	最大待机电流：	0.54 A
最小待机电流：	1.7 V	子类别：	SRAMs
最大压摆率：	1.775 mA	最大供电电压 (Vsup)：	1.9 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	15 mm	Base Number Matches：	1

CY7C1410AV18-300BZI 数据手册

浏览型号CY7C1410AV18-300BZI的Datasheet PDF文件第2页

浏览型号CY7C1410AV18-300BZI的Datasheet PDF文件第3页

浏览型号CY7C1410AV18-300BZI的Datasheet PDF文件第4页

浏览型号CY7C1410AV18-300BZI的Datasheet PDF文件第5页

浏览型号CY7C1410AV18-300BZI的Datasheet PDF文件第6页

CY7C1410AV18

CY7C1412AV18

CY7C1414AV18

PRELIMINARY

36-Mbit QDR-II™ SRAM 2-Word

Burst Architecture

Features

Functional Description

• Separate Independent Read and Write data ports

— Supports concurrent transactions

• 300-MHz clock for high bandwidth

• 2-Word Burst on all accesses

• Double Data Rate (DDR) interfaces on both Read and

Write ports (data transferred at 600 MHz) @ 300 MHz

• Two input clocks (K and K) for precise DDR timing

— SRAM uses rising edges only

The CY7C1410AV18, CY7C1425AV18, CY7C1412AV18, and

CY7C1414AV18 are 1.8V Synchronous Pipelined SRAMs,

equipped with QDR™-II architecture. QDR-II architecture

consists of two separate ports to access the memory array.

The Read port has dedicated Data Outputs to support Read

operations and the Write Port has dedicated Data Inputs to

support Write operations. QDR-II architecture has separate

data inputs and data outputs to completely eliminate the need

to “turn-around” the data bus required with common I/O

devices. Access to each port is accomplished through a

common address bus. The Read address is latched on the

rising edge of the K clock and the Write address is latched on

the rising edge of the K clock. Accesses to the QDR-II Read

and Write ports are completely independent of one another. In

order to maximize data throughput, both Read and Write ports

are equipped with Double Data Rate (DDR) interfaces. Each

address location is associated with two 8-bit words

(CY7C1410AV18) or 9-bit words (CY7C1425AV18) or 18-bit

words (CY7C1412AV18) or 36-bit words (CY7C1414AV18)

that burst sequentially into or out of the device. Since data can

be transferred into and out of the device on every rising edge

of both input clocks (K and K and C and C), memory bandwidth

is maximized while simplifying system design by eliminating

bus “turn-arounds.”

• Two output clocks (C and C) accounts for clock skew

and flight time mismatching

• Echo clocks (CQ and CQ) simplify data capture in

high-speed systems

• Single multiplexed address input bus latches address

inputs for both Read and Write ports

• Separate Port Selects for depth expansion

• Synchronous internally self-timed writes

• Available in x8, x9, x18, and x36 configurations

• Full data coherency, providing most current data

• Core V_DD= 1.8V (±0.1V); I/O V_DDQ= 1.4V to V_DD

• 15 × 17 × 1.4 mm 1.0-mm pitch FBGA package, 165-ball

(11 × 15 matrix)

Depth expansion is accomplished with Port Selects for each

port. Port selects allow each port to operate independently.

• Offered in both lead-free and non lead-free packages

• Variable drive HSTL output buffers

All synchronous inputs pass through input registers controlled

by the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

• JTAG 1149.1 compatible test access port

• Delay Lock Loop (DLL) for accurate data placement

Configurations

CY7C1410AV18 – 4M x 8

CY7C1425AV18 – 4M x 9

CY7C1412AV18 – 2M x 18

CY7C1414AV18 – 1M x 36

Selection Guide

300 MHz

250 MHz

250

200 MHz

200

167 MHz

167

Unit

MHz

Maximum Operating Frequency

300

Maximum Operating Current

1775

1465

1200

1020

Shaded areas contain advance information.

Please contact your local Cypress Sales representative for availability of these parts.

Cypress Semiconductor Corporation

Document #: 38-05615 Rev. *A

•

3901 North First Street

•

San Jose, CA 95134

•

408-943-2600

Revised February 11, 2005

12 3 4 5 6 7...25

中文翻译

下载PDF

与CY7C1410AV18-300BZI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1410BV18	CYPRESS	获取价格	36-Mbit QDR-II⑩ SRAM 2-Word Burst Architectur
CY7C1410BV18_09	CYPRESS	获取价格	36-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1410BV18-167BZC	CYPRESS	获取价格	36-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1410BV18-167BZI	CYPRESS	获取价格	36-Mbit QDR-II⑩ SRAM 2-Word Burst Architectur
CY7C1410BV18-167BZXC	CYPRESS	获取价格	36-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1410BV18-167BZXI	CYPRESS	获取价格	36-Mbit QDR-II⑩ SRAM 2-Word Burst Architectur
CY7C1410BV18-200BZC	CYPRESS	获取价格	36-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1410BV18-200BZI	CYPRESS	获取价格	36-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1410BV18-200BZXC	CYPRESS	获取价格	36-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1410BV18-200BZXI	CYPRESS	获取价格	36-Mbit QDR-II SRAM 2-Word Burst Architecture

与CY7C1410AV18-300BZI相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C1410AV18-300BZI

CY7C1410AV18-300BZI 技术参数

CY7C1410AV18-300BZI 数据手册

与CY7C1410AV18-300BZI相关器件

与CY7C1410AV18-300BZI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C1410AV18-300BZI

CY7C1410AV18-300BZI 技术参数

CY7C1410AV18-300BZI 数据手册

与CY7C1410AV18-300BZI相关器件

与CY7C1410AV18-300BZI相关文章

您还可以找

您在本页遇到什么问题？