5秒后页面跳转
CY7C1363C-133AXCT PDF预览

CY7C1363C-133AXCT

更新时间: 2024-09-28 19:46:23
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 时钟静态存储器内存集成电路
页数 文件大小 规格书
37页 903K
描述
Standard SRAM, 512KX18, 6.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100

CY7C1363C-133AXCT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:LQFP, QFP100,.63X.87
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.52
最长访问时间:6.5 ns其他特性:FLOW-THROUGH ARCHITECTURE
最大时钟频率 (fCLK):133 MHzI/O 类型:COMMON
JESD-30 代码:R-PQFP-G100JESD-609代码:e4
长度:20 mm内存密度:9437184 bit
内存集成电路类型:STANDARD SRAM内存宽度:18
湿度敏感等级:3功能数量:1
端子数量:100字数:524288 words
字数代码:512000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX18输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装等效代码:QFP100,.63X.87封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:2.5/3.3,3.3 V
认证状态:Not Qualified座面最大高度:1.6 mm
最大待机电流:0.04 A最小待机电流:3.14 V
子类别:SRAMs最大压摆率:0.25 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
处于峰值回流温度下的最长时间:20宽度:14 mm
Base Number Matches:1

CY7C1363C-133AXCT 数据手册

 浏览型号CY7C1363C-133AXCT的Datasheet PDF文件第2页浏览型号CY7C1363C-133AXCT的Datasheet PDF文件第3页浏览型号CY7C1363C-133AXCT的Datasheet PDF文件第4页浏览型号CY7C1363C-133AXCT的Datasheet PDF文件第5页浏览型号CY7C1363C-133AXCT的Datasheet PDF文件第6页浏览型号CY7C1363C-133AXCT的Datasheet PDF文件第7页 
CY7C1361C  
CY7C1363C  
9-Mbit (256K × 36/512K × 18)  
Flow-Through SRAM  
9-Mbit (256K  
× 36/512K × 18) Flow-Through SRAM  
Features  
Functional Description  
Supports 100 MHz, 133 MHz bus operations  
Supports 100 MHz bus operations (Automotive)  
256K × 36/512K × 18 common I/O  
The CY7C1361C/CY7C1363C is a 3.3 V, 256K × 36/512K × 18  
synchronous flow-through SRAMs, respectively designed to  
interface with high speed microprocessors with minimum glue  
logic. Maximum access delay from clock rise is 6.5 ns (133 MHz  
version). A 2-bit on-chip counter captures the first address in a  
burst and increments the address automatically for the rest of the  
burst access. All synchronous inputs are gated by registers  
controlled by a positive-edge-triggered clock input (CLK). The  
synchronous inputs include all addresses, all data inputs,  
address-pipelining chip enable (CE1), depth-expansion chip  
enables (CE2 and CE3[1]), burst control inputs (ADSC, ADSP,  
and ADV), write enables (BWx, and BWE), and global write  
(GW). Asynchronous inputs include the output enable (OE) and  
the ZZ pin.  
3.3 V – 5% and +10% core power supply (VDD  
)
2.5 V or 3.3 V I/O power supply (VDDQ  
)
Fast clock-to-output times  
6.5 ns (133-MHz version)  
Provide high performance 2-1-1-1 access rate  
User-selectable burst counter supporting IntelPentium  
interleaved or linear burst sequences  
The CY7C1361C/CY7C1363C enables either interleaved or  
linear burst sequences, selected by the MODE input pin. A HIGH  
selects an interleaved burst sequence, while a LOW selects a  
linear burst sequence. Burst accesses can be initiated with the  
processor address strobe (ADSP) or the cache controller  
address strobe (ADSC) inputs. Address advancement is  
controlled by the address advancement (ADV) input.  
Separate processor and controller address strobes  
Synchronous self-timed write  
Asynchronous output enable  
Available in Pb-free 100-pin TQFP package, Pb-free 165-ball  
FBGA package and non Pb-free 119-ball BGA package  
Addresses and chip enables are registered at rising edge of  
clock when either address strobe processor (ADSP) or address  
strobe controller (ADSC) are active. Subsequent burst  
addresses can be internally generated as controlled by the  
advance pin (ADV).  
TQFP available with 3-chip enable and 2-chip enable  
IEEE 1149.1 JTAG-compatible boundary scan  
“ZZ” sleep mode option  
The CY7C1361C/CY7C1363C operates from a +3.3 V core  
power supply while all outputs may operate with either a +2.5 or  
+3.3 V supply. All inputs and outputs are JEDEC-standard  
JESD8-5-compatible.  
For a complete list of related documentation, click here.  
Selection Guide  
Description  
Maximum access time  
133 MHz  
100 MHz Unit  
6.5  
250  
40  
8.5  
180  
40  
ns  
Maximum operating current  
mA  
mA  
mA  
Maximum CMOS standby current  
Commercial/Industrial  
Automotive  
60  
Note  
1. CE is for A version of 100-pin TQFP (3 Chip Enable Option). 119-ball BGA is offered only in 2 Chip Enable.  
3
Cypress Semiconductor Corporation  
Document Number: 38-05541 Rev. *T  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised January 11, 2018  
 
 
 
 

CY7C1363C-133AXCT 替代型号

型号 品牌 替代类型 描述 数据表
CY7C1363C-133AXC CYPRESS

类似代替

9-Mbit (256K x 36/512K x 18) Flow-Through SRAM

与CY7C1363C-133AXCT相关器件

型号 品牌 获取价格 描述 数据表
CY7C1363C-133AXI CYPRESS

获取价格

9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
CY7C1363C-133AXIT CYPRESS

获取价格

Cache SRAM, 512KX18, 6.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026,
CY7C1363C-133BGC CYPRESS

获取价格

9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
CY7C1363C-133BGI CYPRESS

获取价格

9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
CY7C1363C-133BGXC CYPRESS

获取价格

9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
CY7C1363C-133BGXI CYPRESS

获取价格

9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
CY7C1363C-133BZC CYPRESS

获取价格

9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
CY7C1363C-133BZI CYPRESS

获取价格

9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
CY7C1363C-133BZXC CYPRESS

获取价格

9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
CY7C1363C-133BZXI CYPRESS

获取价格

9-Mbit (256K x 36/512K x 18) Flow-Through SRAM