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CY7C1355A-117BGI PDF预览

CY7C1355A-117BGI

更新时间： 2024-11-18 03:03:11
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器时钟
页数 文件大小 规格书
28页 563K
描述
256K x 36/512K x 18 Synchronous Flow-Thru SRAM with NoBL Architecture

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CY7C1355A-117BGI 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：BGA包装说明：14 X 22 MM, 2.40 MM HEIGHT, BGA-119
针数：119Reach Compliance Code：not_compliant
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
风险等级：5.24Is Samacsys：N
最长访问时间：7 ns其他特性：FLOW-THROUGH ARCHITECTURE
最大时钟频率 (fCLK)：117 MHzI/O 类型：COMMON
JESD-30 代码：R-PBGA-B119JESD-609代码：e0
长度：22 mm内存密度：9437184 bit
内存集成电路类型：ZBT SRAM内存宽度：36
功能数量：1端子数量：119
字数：262144 words字数代码：256000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：256KX36
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：BGA封装等效代码：BGA119,7X17,50
封装形状：RECTANGULAR封装形式：GRID ARRAY
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：2.5/3.3,3.3 V认证状态：Not Qualified
座面最大高度：2.4 mm最大待机电流：0.03 A
最小待机电流：3.14 V子类别：SRAMs
最大压摆率：0.385 mA最大供电电压 (Vsup)：3.465 V
最小供电电压 (Vsup)：3.135 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：BALL端子节距：1.27 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：14 mmBase Number Matches：1

CY7C1355A-117BGI 数据手册

 浏览型号CY7C1355A-117BGI的Datasheet PDF文件第2页浏览型号CY7C1355A-117BGI的Datasheet PDF文件第3页浏览型号CY7C1355A-117BGI的Datasheet PDF文件第4页浏览型号CY7C1355A-117BGI的Datasheet PDF文件第5页浏览型号CY7C1355A-117BGI的Datasheet PDF文件第6页浏览型号CY7C1355A-117BGI的Datasheet PDF文件第7页 
CY7C1357A  
CY7C1355A  
256K x 36/512K x 18 Synchronous Flow-Thru  
SRAM with NoBL™ Architecture  
All synchronous inputs are gated by registers controlled by a  
positive-edge-triggered Clock Input (CLK). The synchronous  
Features  
• Zero Bus Latency, no dead cycles between write and  
read cycles  
inputs include all addresses, all data inputs, depth-expansion  
Chip Enables (CE, CE2, and CE3), Cycle Start Input (ADV/LD),  
Clock Enable (CEN), Byte Write Enables (BWa, BWb, BWc,  
and BWd), and read-write control (WEN). BWc and BWd apply  
to CY7C1355A only.  
• Fast access times: 2.5 ns, 3.0 ns, and 3.5 ns  
• Fast clock speed: 133, 117, and 100 MHz  
• Fast OE access time: 6.5, 7.0, and 7.5ns  
• Internally synchronized registered outputs eliminate  
the need to control OE  
Address and control signals are applied to the SRAM during  
one clock cycle, and one cycle later, its associated data  
occurs, either read or write.  
• 3.3V –5% and +5% power supply  
• 3.3V or 2.5V I/O supply  
• Single WEN (READ/WRITE) control pin  
• Positive clock-edge triggered, address, data, and  
control signal registers for fully pipelined applications  
A
Clock Enable (CEN) pin allows operation of the  
CY7C1355A/CY7C1357A to be suspended as long as  
necessary. All synchronous inputs are ignored when (CEN) is  
HIGH and the internal device registers will hold their previous  
values.  
• Interleaved or linear four-word burst capability  
• Individual byte write (BWa–BWd) control (may be tied  
LOW)  
• CEN pin to enable clock and suspend operations  
• Three chip enables for simple depth expansion  
• Automatic Power-down feature available using ZZ  
mode or CE deselect.  
There are three Chip Enable pins (CE, CE2, CE3) that allow  
the user to deselect the device when desired. If any one of  
these three are not active when ADV/LD is LOW, no new  
memory operation can be initiated and any burst cycle in  
progress is stopped. However, any pending data transfers  
(read or write) will be completed. The data bus will be in  
high-impedance state one cycle after chip is deselected or a  
write cycle is initiated.  
• JTAG boundary scan (except CY7C1357A)  
The CY7C1355A and CY7C1357A have an on-chip 2-bit burst  
counter. In the burst mode, the CY7C1355A and CY7C1357A  
provide four cycles of data for a single address presented to  
the SRAM. The order of the burst sequence is defined by the  
MODE input pin. The MODE pin selects between linear and  
interleaved burst sequence. The ADV/LD signal is used to load  
a new external address (ADV/LD = LOW) or increment the  
internal burst counter (ADV/LD = HIGH)  
• Low-profile 119-bump, 14-mm × 22-mm BGA (Ball Grid  
Array) for CY7C1355A, and 100-pin TQFP packages for  
both devices  
Functional Description  
The CY7C1355A and CY7C1357A SRAMs are designed to  
eliminate dead cycles when transitions from READ to WRITE  
or vice versa. These SRAMs are optimized for 100 percent bus  
utilization and achieves Zero Bus Latency (ZBL). They  
integrate 262,144 × 36 and 524,288 × 18 SRAM cells, respec-  
tively, with advanced synchronous peripheral circuitry and a  
2-bit counter for internal burst operation. These employ  
high-speed, low power CMOS designs using advanced  
triple-layer polysilicon, double-layer metal technology. Each  
memory cell consists of Six transistors.  
Output Enable (OE), Sleep Enable (ZZ) and burst sequence  
select (MODE) are the asynchronous signals. OE can be used  
to disable the outputs at any given time. ZZ may be tied to  
LOW if it is not used.  
Four pins are used to implement JTAG test capabilities. The  
JTAG circuitry is used to serially shift data to and from the  
device. JTAG inputs use LVTTL/LVCMOS levels to shift data  
during this testing mode of operation.  
Selection Guide  
7C1355A-133  
7C1357A-133  
7C1355A-117  
7C1357A-117  
7C1355A-100  
7C1357A-100  
Unit  
ns  
Maximum Access Time  
6.5  
410  
30  
7
7.5  
350  
30  
Maximum Operating Current  
Maximum CMOS Standby Current  
385  
30  
mA  
mA  
Cypress Semiconductor Corporation  
•
3901 North First Street  
•
San Jose  
•
CA 95134  
•
408-943-2600  
Document #: 38-05265 Rev. *A  
Revised August 23, 2002  
1234567...28

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CY7C1355A-133BGC CYPRESS

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 		9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture
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CY7C1355B-100BG CYPRESS

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CY7C1355B-100BGC CYPRESS

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CY7C1355B-100BGI CYPRESS

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 		ZBT SRAM, 256KX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
CY7C1355B-100BZC CYPRESS

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 		9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture

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