Datasheet > 存储 > SRAM> CY7C1319BV18-167BZI

CY7C1319BV18-167BZI

更新时间： 2024-11-24 05:19:11

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		存储内存集成电路静态存储器双倍数据速率时钟
页数	文件大小	规格书
28页	480K
描述
18-Mbit DDR-II SRAM 4-Word Burst Architecture

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技术参数
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CY7C1319BV18-167BZI 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165	针数：	165
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.32
最长访问时间：	0.5 ns	其他特性：	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)：	167 MHz	I/O 类型：	COMMON
JESD-30 代码：	R-PBGA-B165	JESD-609代码：	e0
长度：	15 mm	内存密度：	18874368 bit
内存集成电路类型：	DDR SRAM	内存宽度：	18
湿度敏感等级：	3	功能数量：	1
端子数量：	165	字数：	1048576 words
字数代码：	1000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	1MX18	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	LBGA
封装等效代码：	BGA165,11X15,40	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	220	电源：	1.5/1.8,1.8 V
认证状态：	Not Qualified	座面最大高度：	1.4 mm
最大待机电流：	0.2 A	最小待机电流：	1.7 V
子类别：	SRAMs	最大压摆率：	0.4 mA
最大供电电压 (Vsup)：	1.9 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	13 mm
Base Number Matches：	1

CY7C1319BV18-167BZI 数据手册

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CY7C1317BV18

CY7C1917BV18

CY7C1319BV18

CY7C1321BV18

18-Mbit DDR-II SRAM 4-Word

Burst Architecture

Features

Functional Description

• 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)

• 300-MHz clock for high bandwidth

The CY7C1317BV18, CY7C1917BV18, CY7C1319BV18, and

CY7C1321BV18 are 1.8V Synchronous Pipelined SRAM

equipped with DDR-II (Double Data Rate) architecture. The

DDR-II consists of an SRAM core with advanced synchronous

peripheral circuitry and a two-bit burst counter. Addresses for

Read and Write are latched on alternate rising edges of the

input (K) clock. Write data is registered on the rising edges of

both K and K. Read data is driven on the rising edges of C and

C if provided, or on the rising edge of K and K if C/C are not

provided. Each address location is associated with four 8-bit

words in the case of CY7C1317BV18 and four 9-bit words in

the case of CY7C1917BV18 that burst sequentially into or out

of the device. The burst counter always starts with “00” inter-

nally in the case of CY7C1317BV18 and CY7C1917BV18. On

CY7C1319BV18 and CY7C1321BV18, the burst counter

takes in the last two significant bits of the external address and

bursts four 18-bit words in the case of CY7C1319BV18, and

four 36-bit words in the case of CY7C1321BV18, sequentially

into or out of the device.

• 4-Word burst for reducing address bus frequency

• Double Data Rate (DDR) interfaces

(data transferred at 600MHz) @ 300 MHz

• Two input clocks (K and K) for precise DDR timing

— SRAM uses rising edges only

• Two input clocks for output data (C and C) to minimize

clock-skew and flight-time mismatches

• Echo clocks (CQ and CQ) simplify data capture in

high-speed systems

• Synchronous internally self-timed writes

• 1.8V core power supply with HSTL inputs and outputs

• Variable drive HSTL output buffers

• Expanded HSTL output voltage (1.4V–V_DD

)

Asynchronous inputs include output impedance matching

input (ZQ). Synchronous data outputs (Q, sharing the same

physical pins as the data inputs, D) are tightly matched to the

two output echo clocks CQ/CQ, eliminating the need for

separately capturing data from each individual DDR-II SRAM

in the system design. Output data clocks (C/C) enable

maximum system clocking and data synchronization flexibility.

• Available in 165-ball FBGA package (13 x 15 x 1.4 mm)

• Offered in both lead-free and non-lead free packages

• JTAG 1149.1 compatible test access port

• Delay Lock Loop (DLL) for accurate data placement

Configurations

All synchronous inputs pass through input registers controlled

by the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

CY7C1317BV18 – 2M x 8

CY7C1917BV18 – 2M x 9

CY7C1319BV18 – 1M x 18

CY7C1321BV18 – 512K x 36

Selection Guide

300 MHz

300

278 MHz

250 MHz

250

200 MHz

200

167 MHz

167

Unit

MHz

Maximum Operating Frequency

Maximum Operating Current

278

530

550

500

450

400

Cypress Semiconductor Corporation

Document Number: 38-05622 Rev. *C

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised June 27, 2006

12 3 4 5 6 7...28

中文翻译

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与CY7C1319BV18-167BZI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1319BV18-167BZXC	CYPRESS	获取价格	18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1319BV18-167BZXI	CYPRESS	获取价格	18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1319BV18-200BZC	CYPRESS	获取价格	18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1319BV18-200BZI	CYPRESS	获取价格	18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1319BV18-200BZXC	CYPRESS	获取价格	18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1319BV18-200BZXI	CYPRESS	获取价格	18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1319BV18-250BZC	CYPRESS	获取价格	18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1319BV18-250BZI	CYPRESS	获取价格	18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1319BV18-250BZXC	CYPRESS	获取价格	18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1319BV18-250BZXI	CYPRESS	获取价格	18-Mbit DDR-II SRAM 4-Word Burst Architecture

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