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CY7C1270KV18-400BZXC

更新时间： 2024-01-11 00:56:24

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器双倍数据速率
页数	文件大小	规格书
28页	898K
描述
36-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)

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CY7C1266KV18, CY7C1277KV18

CY7C1268KV18, CY7C1270KV18

36-Mbit DDR II+ SRAM 2-Word Burst

Architecture (2.5 Cycle Read Latency)

36-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)

Features

Configurations

■ 36 Mbit density (4 M × 8, 4 M × 9, 2 M × 18, 1 M × 36)

■ 550 MHz clock for high bandwidth

With Read Cycle Latency of 2.5 Cycles:

CY7C1266KV18 – 4 M × 8

CY7C1277KV18 – 4 M × 9

■ 2-word burst for reducing address bus frequency

CY7C1268KV18 – 2 M × 18

CY7C1270KV18 – 1 M × 36

■ Double data rate (DDR) interfaces

(data transferred at 1100 MHz) at 550 MHz

■ Available in 2.5 clock cycle latency

Functional Description

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

The CY7C1266KV18, CY7C1277KV18, CY7C1268KV18, and

CY7C1270KV18 are 1.8 V synchronous pipelined SRAMs

equipped with DDR II+ architecture. The DDR II+ consists of an

SRAM core with advanced synchronous peripheral circuitry.

Addresses for read and write are latched on alternate rising

edges of the input (K) clock. Write data is registered on the rising

edges of both K and K. Read data is driven on the rising edges

of K and K. Each address location is associated with two 8-bit

words (CY7C1266KV18), 9-bit words (CY7C1277KV18), 18-bit

words (CY7C1268KV18), or 36-bit words (CY7C1270KV18) that

burst sequentially into or out of the device.

■ Echo clocks (CQ and CQ) simplify data capture in high speed

systems

■ Data valid pin (QVLD) to indicate valid data on the output

■ Synchronous internally self-timed writes

■ DDR II+ operates with 2.5 cycle read latency when DOFF is

asserted HIGH

■ Operatessimilarto DDR Idevice with 1 cycle read latencywhen

Asynchronous inputs include an output impedance matching

input (ZQ). Synchronous data outputs (Q, sharing the same

physical pins as the data inputs D) are tightly matched to the two

output echo clocks CQ/CQ, eliminating the need for separately

capturing data from each individual DDR SRAM in the system

design.

DOFF is asserted LOW

[1]

■ Core V_DD= 1.8 V ± 0.1 V; I/O V_DDQ= 1.4 V to V_DD

❐ Supports both 1.5 V and 1.8 V I/O supply

■ HSTL inputs and variable drive HSTL output buffers

■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the K or K input clocks. Writes are

conducted with on-chip synchronous self-timed write circuitry.

■ Phase-locked loop (PLL) for accurate data placement

Table 1. Selection Guide

Description

Maximum operating frequency

550 MHz

500 MHz

500

450 MHz

450

400 MHz

400

Unit

MHz

550

690

700

890

Maximum operating current

× 8

× 9

640

590

540

640

590

540

× 18

× 36

650

600

550

830

760

690

Note

1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support V

= 1.4 V to V

DDQ

Cypress Semiconductor Corporation

Document Number: 001-57835 Rev. *C

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised February 24, 2011

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CY7C1270KV18-400BZXC 替代型号

型号	品牌	替代类型	描述	数据表
CY7C1270KV18-400BZC	CYPRESS	类似代替	36-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)

与CY7C1270KV18-400BZXC相关器件

型号	品牌	获取价格	描述	数据表
CY7C1270KV18-400BZXI	CYPRESS	获取价格	36-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1270KV18-400BZXI	INFINEON	获取价格	DDR-II+ CIO
CY7C1270KV18-550BZC	CYPRESS	获取价格	36-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1270V18	CYPRESS	获取价格	36-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1270V18-300BZC	CYPRESS	获取价格	36-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1270V18-300BZI	CYPRESS	获取价格	36-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1270V18-300BZXC	CYPRESS	获取价格	36-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1270V18-300BZXI	CYPRESS	获取价格	36-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1270V18-333BZC	CYPRESS	获取价格	36-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1270V18-333BZI	CYPRESS	获取价格	36-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)

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