Datasheet > 存储 > SRAM> CY7C1276V18-300BZXC

CY7C1276V18-300BZXC

更新时间： 2024-02-10 03:40:10

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
28页	1259K
描述
36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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CY7C1276V18-300BZXC 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	LBGA, BGA165,11X15,40	针数：	165
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.84
Is Samacsys：	N	最长访问时间：	0.45 ns
其他特性：	PIPELINED ARCHITECTURE	最大时钟频率 (fCLK)：	300 MHz
I/O 类型：	SEPARATE	JESD-30 代码：	R-PBGA-B165
JESD-609代码：	e1	长度：	17 mm
内存密度：	37748736 bit	内存集成电路类型：	QDR SRAM
内存宽度：	9	湿度敏感等级：	3
功能数量：	1	端子数量：	165
字数：	4194304 words	字数代码：	4000000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	4MX9
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	LBGA	封装等效代码：	BGA165,11X15,40
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
电源：	1.5/1.8,1.8 V	认证状态：	Not Qualified
座面最大高度：	1.4 mm	最大待机电流：	0.28 A
最小待机电流：	1.7 V	子类别：	SRAMs
最大压摆率：	1.04 mA	最大供电电压 (Vsup)：	1.9 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	20
宽度：	15 mm	Base Number Matches：	1

CY7C1276V18-300BZXC 数据手册

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CY7C1261V18

CY7C1276V18

CY7C1263V18

CY7C1265V18

36-Mbit QDR™-II+ SRAM 4-Word

Burst Architecture (2.5 Cycle Read Latency)

Functional Description

Features

• Separate independent read and write data ports

— Supports concurrent transactions

The CY7C1261V18, CY7C1276V18, CY7C1263V18, and

CY7C1265V18 are 1.8V Synchronous Pipelined SRAMs,

equipped with Quad Data Rate-II+ (QDR-II+) architecture.

QDR-II+ architecture consists of two separate ports to access

the memory array. The read port has dedicated data outputs

to support read operations and the write port has dedicated

data inputs to support write operations. QDR-II+ architecture

has separate data inputs and data outputs to completely

eliminate the need to “turn around” the data bus required with

common IO devices. Each port is accessed through a common

address bus. Addresses for read and write addresses are

latched on alternate rising edges of the input (K) clock.

Accesses to the QDR-II+ read and write ports are completely

independent of one another. To maximize data throughput,

both read and write ports are equipped with Double Data Rate

(DDR) interfaces. Each address location is associated with

• 300 MHz to 400 MHz clock for high bandwidth

• 4-Word Burst for reducing address bus frequency

• Double Data Rate (DDR) interfaces on both read and write

ports (data transferred at 800 MHz) at 400 MHz

• Read latency of 2.5 clock cycles

• Two input clocks (K and K) for precise DDR timing

— SRAM uses rising edges only

• Echo clocks (CQ and CQ) simplify data capture in

high-speed systems

• Singlemultiplexedaddressinputbuslatchesaddressinputs

for both read and write ports

four

8-bit

words

(CY7C1261V18),

9-bit

words

• Separate Port Selects for depth expansion

• Data valid pin (QVLD) to indicate valid data on the output

• Synchronous internally self-timed writes

(CY7C1276V18), 18-bit words (CY7C1263V18), or 36-bit

words (CY7C1265V18) that burst sequentially into or out of the

device. Because data can be transferred into and out of the

device on every rising edge of both input clocks (K and K),

memory bandwidth is maximized while simplifying system

design by eliminating bus “turn-arounds”.

• Available in x8, x9, x18, and x36 configurations

• Full data coherency providing most current data

[1]

• Core V_DD= 1.8V ± 0.1V; IO V_DDQ= 1.4V to V_DD

Depth expansion is accomplished with Port Selects for each

port. Port selects enable each port to operate independently.

• HSTL inputs and Variable drive HSTL output buffers

• Available in 165-ball FBGA package (15 x 17 x 1.4 mm)

• Offered in both Pb-free and non Pb-free packages

• JTAG 1149.1 compatible test access port

All synchronous inputs pass through input registers controlled

by the K or K input clocks. All data outputs pass through output

registers controlled by the K or K input clocks. Writes are

conducted with on-chip synchronous self-timed write circuitry.

• Delay Lock Loop (DLL) for accurate data placement

Configurations

With Read Cycle Latency of 2.0 cycles:

CY7C1261V18 – 4M x 8

CY7C1276V18 – 4M x 9

CY7C1263V18 – 2M x 18

CY7C1265V18 – 1M x 36

Selection Guide

400 MHz

400

375 MHz

333 MHz

333

300 MHz

300

Unit

MHz

Maximum Operating Frequency

Maximum Operating Current

375

1330

1240

1120

1040

Note

1. The QDR consortium specification for V

is 1.5V + 0.1V. The Cypress QDR devices exceed the QDR consortium specification and are capable of supporting

DDQ

= 1.4V to V

DDQ

Cypress Semiconductor Corporation

Document Number: 001-06366 Rev. *C

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised May 14, 2007

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与CY7C1276V18-300BZXC相关器件

型号	品牌	获取价格	描述	数据表
CY7C1276V18-300BZXI	CYPRESS	获取价格	36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1276V18-333BZC	CYPRESS	获取价格	36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1276V18-333BZI	CYPRESS	获取价格	36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1276V18-333BZXC	CYPRESS	获取价格	36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1276V18-333BZXI	CYPRESS	获取价格	36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1276V18-375BZC	CYPRESS	获取价格	36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1276V18-375BZI	CYPRESS	获取价格	36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1276V18-375BZXC	CYPRESS	获取价格	36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1276V18-375BZXI	CYPRESS	获取价格	36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1276V18-400BZC	CYPRESS	获取价格	36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu

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