Datasheet > CY7C1270XV18-633BZXC

CY7C1270XV18-633BZXC

更新时间： 2024-11-29 12:23:47

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器双倍数据速率
页数	文件大小	规格书
28页	900K
描述
36-Mbit DDR II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

CY7C1270XV18-633BZXC 技术参数

是否Rohs认证：	符合	生命周期：	Active
零件包装代码：	BGA	包装说明：	LBGA, BGA165,11X15,40
针数：	165	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
Factory Lead Time：	1 week	风险等级：	5.75
最长访问时间：	0.45 ns	其他特性：	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)：	633 MHz	I/O 类型：	COMMON
JESD-30 代码：	R-PBGA-B165	JESD-609代码：	e1
长度：	15 mm	内存密度：	37748736 bit
内存集成电路类型：	DDR SRAM	内存宽度：	36
湿度敏感等级：	3	功能数量：	1
端子数量：	165	字数：	1048576 words
字数代码：	1000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	1MX36	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	LBGA
封装等效代码：	BGA165,11X15,40	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	电源：	1.5,1.8 V
认证状态：	Not Qualified	座面最大高度：	1.4 mm
最大待机电流：	1.23 A	最小待机电流：	1.7 V
子类别：	SRAMs	最大压摆率：	1.23 mA
最大供电电压 (Vsup)：	1.9 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	30	宽度：	13 mm
Base Number Matches：	1

CY7C1270XV18-633BZXC 数据手册

浏览型号CY7C1270XV18-633BZXC的Datasheet PDF文件第2页

浏览型号CY7C1270XV18-633BZXC的Datasheet PDF文件第3页

浏览型号CY7C1270XV18-633BZXC的Datasheet PDF文件第4页

浏览型号CY7C1270XV18-633BZXC的Datasheet PDF文件第5页

浏览型号CY7C1270XV18-633BZXC的Datasheet PDF文件第6页

浏览型号CY7C1270XV18-633BZXC的Datasheet PDF文件第7页

CY7C1268XV18, CY7C1270XV18

36-Mbit DDR II+ Xtreme SRAM Two-Word

Burst Architecture (2.5 Cycle Read Latency)

36-Mbit DDR II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)

Features

Configurations

■ 36-Mbit density (2 M × 18, 1 M × 36)

■ 633 MHz clock for high bandwidth

With Read Cycle Latency of 2.5 cycles:

CY7C1268XV18 – 2 M × 18

CY7C1270XV18 – 1 M × 36

■ Two-word burst for reducing address bus frequency

■ Double data rate (DDR) interfaces (data transferred at

1266 MHz) at 633 MHz

Functional Description

The CY7C1268XV18, and CY7C1270XV18 are 1.8 V

synchronous pipelined SRAMs equipped with DDR II+

architecture. The DDR II+ consists of an SRAM core with

advanced synchronous peripheral circuitry. Addresses for read

and write are latched on alternate rising edges of the input (K)

clock. Write data is registered on the rising edges of both K and

K. Read data is driven on the rising edges of K and K. Each

address location is associated with two 18-bit words

(CY7C1268XV18), or 36-bit words (CY7C1270XV18) that burst

sequentially into or out of the device.

■ Available in 2.5 clock cycle latency

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Echo clocks (CQ and CQ) simplify data capture in high speed

systems

■ Data valid pin (QVLD) to indicate valid data on the output

■ Synchronous internally self-timed writes

Asynchronous inputs include an output impedance matching

input (ZQ). Synchronous data outputs (Q, sharing the same

physical pins as the data inputs D) are tightly matched to the two

output echo clocks CQ/CQ, eliminating the need for separately

capturing data from each individual DDR SRAM in the system

design.

■ DDR II+ Xtreme operates with 2.5 cycle read latency when

DOFF is asserted HIGH

■ Operatessimilarto DDR Idevice with 1 cycle read latencywhen

DOFF is asserted LOW

■ Core V_DD= 1.8 V ± 0.1 V; I/O V_DDQ= 1.4 V to 1.6 V

❐ Supports 1.5 V I/O supply

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the K or K input clocks. Writes are

conducted with on-chip synchronous self-timed write circuitry.

■ HSTL inputs and variable drive HSTL output buffers

■ Available in 165-ball fine pitch ball grid array (FBGA) package

(13 × 15 × 1.4 mm)

■ Offered in Pb-free packages

■ JTAG 1149.1 compatible test access port

■ Phase-locked loop (PLL) for accurate data placement

Selection Guide

Description

Maximum operating frequency

633 MHz

633

600 MHz Unit

600

910

MHz

Maximum operating current

× 18

× 36

965

1230

1165

Cypress Semiconductor Corporation

Document Number: 001-70329 Rev. *B

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised October 11, 2012

12 3 4 5 6 7...28

中文翻译

下载PDF

CY7C1270XV18-633BZXC 替代型号

型号	品牌	替代类型	描述	数据表
CY7C1270XV18-600BZXC	CYPRESS	类似代替	36-Mbit DDR II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)

与CY7C1270XV18-633BZXC相关器件

型号	品牌	获取价格	描述	数据表
CY7C12761KV18	CYPRESS	获取价格	36-Mbit QDRÂ® II SRAM 4-Word Burst Architectu
CY7C1276KV18	CYPRESS	获取价格	36-Mbit QDR? II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1276V18	CYPRESS	获取价格	36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1276V18-300BZC	CYPRESS	获取价格	36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1276V18-300BZI	CYPRESS	获取价格	36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1276V18-300BZXC	CYPRESS	获取价格	36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1276V18-300BZXI	CYPRESS	获取价格	36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1276V18-333BZC	CYPRESS	获取价格	36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1276V18-333BZI	CYPRESS	获取价格	36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1276V18-333BZXC	CYPRESS	获取价格	36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu

与CY7C1270XV18-633BZXC相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

67
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

63

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C1270XV18-633BZXC

CY7C1270XV18-633BZXC 技术参数

CY7C1270XV18-633BZXC 数据手册

CY7C1270XV18-633BZXC 替代型号

与CY7C1270XV18-633BZXC相关器件

与CY7C1270XV18-633BZXC相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C1270XV18-633BZXC

CY7C1270XV18-633BZXC 技术参数

CY7C1270XV18-633BZXC 数据手册

CY7C1270XV18-633BZXC 替代型号

与CY7C1270XV18-633BZXC相关器件

与CY7C1270XV18-633BZXC相关文章

您还可以找

您在本页遇到什么问题？